France

In recent years, an enormous surge of works is being carried out on developing new methods for magnetic devices for various kinds of healthcare applications. Miniaturising magnetic sensors offer the prospect to replace the bulky laboratory instruments with easy-to-use clinical platforms ranging from portable lab-on-a-chip diagnostics to wearable and implantable devices. It would bring down the cost, size and out-of-hospital use by several orders of magnitude. Implementation of such magnetic sensing microsystems using traditional CMOS technology is inefficient in terms of area, sensitivity and signal to noise ratio. Such inefficiencies have driven a significant effort to investigate the development of beyond-CMOS devices. Integration of magnetoresistive devices, e.g. Tunnelling Magnetoresistive (TMR), with CMOS technology provides an opportunity to produce and optimise powerful and low-power devices for low biomagnetic field applications. Such heterogeneously structure combining the CMOS circuitry interface and non-CMOS sensors higher performance electronics for detecting pico-Tesla magnetic field. 
The talk will introduce our research at the Microelectronics Lab (www.melabresearch.com) at the University of Glasgow on integrated electronic circuits and sensors with several different works addressing the development of architectures for the implementation of efficient biomedical wearable and implantable technologies. It presents findings and trends in magnetic sensing devices, including:
(i) Tunnelling magnetoresistive (TMR) sensors and circuit Interfaces for malaria parasite detection
(ii) Integrated micro–Nuclear Magnetic Resonance (micro-NMR) for point of care diagnostics
(iii) Implantable Magnetomyography (MMG) with magnetoelectric (ME) and TMR sensors 
(iv) Spintronic sensors based on Magnetic Tunnel Junction for wearable eye movements monitoring


ESSCIRC ESSDERC Educational Events

Principles of Magnetic Sensing in Medical Microsystems

magnetoresistive

magnetic sensors

spintronics

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.

Highlights:
* 3 joint keynote presentations
* 3 keynote presentations ESSCIRC
* 3 keynote presentations ESSDERC
* Invited papers with overall coverage of all aspects of advanced devices and circuits
* Presentation of IEEE and ESSCIRC/ESSDERC Awards
* Educational Events

JOINT PLENARY talks live broadcast: September 13, 2021<br>
ESSCIRC and ESSDERC KEYNOTE talks live broadcast: September 15, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Conference Technical sessions: September 14 – 16 – 17, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Educational Events: September 20-21-22, 2021<br>
(on demand videos available from September 6 until November 30, 2021)

**Please see here for the [ESSCIRC Guide](https://drive.google.com/file/d/10dghzuv4aQBty4QfTIY9Q8hXyqsue8Le/view?usp=sharing), [ESSDERC Guide](https://drive.google.com/file/d/10dx9y2tm9cHPDa4upNUYjfXCf44aPry5/view?usp=sharing), and the [Program at a Glance](https://drive.google.com/file/d/10eU0OLTXEpiNzI5hkqv4mSr43T8cedPP/view?usp=sharing)**

Please register for educational events at the following link: https://www.registerme.eu/event/esscirc-essderc-2021/

Please register for the ESSCIRC/ESSDERC Educational Events to join the event.

The Educational Events of ESSCIRC ESSDERC 2021. 


![](https://s3.eu-west-1.amazonaws.com/underline.prod/uploads/markdown_image/1/image/2e10c515564e9ec3287ee4c664011c20.png)

The energy cost of storing and moving data is enormous, and is growing at such a rapid pace that within a few years the power demand may overwhelm some developed nations. Non-volatile memory (NVM) and neuromorphic computing are enabling critical advances in this area, but there are many scientific and technological challenges. This conference will cover the materials challenges of different memory technologies, from the fundamental processes and mechanisms, to industry perspectives on materials specifications and manufacturing.

Materials Challenges for Memory

technical paper

The novel photo-acoustic CO2 sensor SCD4x launched by Sensirion in early 2021 represents a major innovation step in the miniaturization and cost-reduction of selective and long-term stable CO2 sensor technology. Being the first optical CO2 sensor compatible with surface-mounting technology and made for reflow soldering, the sensor allows for a broader adoption of indoor air quality monitoring both in residential air conditioning as well as internet of things devices. In my talk I will address how MEMS and CMOS technology combined with tailored assembly and packaging designs has enabled shrinking a measurement system previously reserved for scientific laboratories to an SMD component of the size smaller than a sugar cube.

Breaking the size barrier in CO2 sensing: the photo-acoustic CO2 sensor “SCD4x”

InP DHBT technologies are well established for high data rates at the III-V Lab in France and as a foundry at Teledyne in US. FBH has developed over the past years three InP DHBT technologies for high performance communications and sensing applications, with particular view on signal generation and amplification, as well as signal conversion. This presentation will provide details on the achieved results in the three InP DHBT technologies at FBH. The most prominent technology is the transferred substrate (TS) InP DHBT technology at FBH, where the host InP substrate is removed and the MMIC is realized on an eligible substrate of choice. With this technology, FBH has achieved 530 GHz cut-off frequency with a breakdown voltage of > 4 V. Using the TS InP DHBT process FBH has developed an InP-on-BiCMOS process, which is unique worldwide and which combines the advantages of high complexity of SiGe BiCMOS circuits with the performance capabilities of InP technology. Signal generation with integrated PLL synthesis has been demonstrated with this technology up to 300 GHz. Also highly compact front-end circuits for radar applications have been published. More recently, FBH has developed a robust triple-mesa MMIC process based on InP DHBT devices with cut-off frequencies beyond 300 GHz. The advantages and challenges of all three process will be discussed and evaluated during the talk

InP DHBT technologies at FBH

“Type-II” InP/GaAsSb/InP Double Heterostructure Bipolar Transistors (DHBTs) with maximum oscillation frequencies fMAX = 1 THz will be described.

The transistors use a 20-nm-thick composition- and impurity- graded GaAsSb base and a 125-nm thick Si-doped InP collector. The THz fMAX figure-of-merit is achieved by optimizing lateral scaling: the emitter width is 150 nm and the base contact is undercut down to 50 nm to match the base contact electrical transfer length. The (0.15 × 7.5) µm2 devices feature a maximum DC current gain β = 14 and a common emitter breakdown voltage BVCEO = 5.05 V. Performance figures-of-merit will be contrasted across technologies –as it turns out, InP/GaAsSb DHBTs offer advantages in efficiency, linearity and noise that combine favorably for a variety or analog and digital circuits.

The influence of self-heating on output power properties in 94 GHz load-pull will be discussed, highlighting the importance of thermal management in achieving ultimate device performance.

Current work is under way toward a new process architecture: first results will be shown if devices can be successfully implemented.

THz InP/GaAsSb DHBTs

A multiscale TCAD model is introduced in the presentation to investigate the intrinsic physical properties of type-II DHBTs. The simulation environment is composed of a two-dimensional hydrodynamic model and an one-dimensional full-band atomistic quantum transport solver. After careful calibration, good agreements between simulations and experiments have been obtained in both the DC and AC characteristics. Moreover, the transport properties of the device have been investigated in the ballistic and dissipative case. Last but not least, the performance of agreesively down-scaled transistors has been simulated to shed light on the realization of transistors towards and beyond 1 THz.

Multi-Scale Modeling of Type-II DHBTs: from Bandstructure to Self-Heating Effects

While InP heterojunction bipolar transistor technologies show continuous improvement in terms of RF performances, the accurate characterization of these THz transistors is crucial to assess the cut-off frequencies as well as to precisely extract and validate the device compact model, thus enabling millimeter and sub-millimeter-wave IC design. On-wafer measurements are particularly difficult beyond 110 GHz since unwanted parasitic effects become predominant and may mask the intrinsic behavior of the nanoscale device. A such high frequencies, two strategies may be adopted and combined in order to perform accurate on-wafer device measurements at submillimeter-wave frequencies: i) optimizing the test structures’ design in order to minimize the parasitics, ii) developping on-wafer calibration standards on the same substrate as the device to characterize. Coupled with electromagnetic simulation for the test structures design optimization and the measurement's validation, these strategies proved to be efficient for the characterization of InP passive devices up to 500 GHz and InP DHBT up to 330 GHz.

On-Wafer TRL Calibration Kit Design for InP Technologies Characterization Up To 500 GHz

To meet the prerequisites of monolithic indium phosphide based integrated terahertz (THz) technologies that are capable of achieving beyond-5G wireless communications system, a single computationally efficient circuit design tool is essential. Through the implementation of accurate and SPICE-compatible compact models and development of associated process design kits (PDK) for InP double heterojunction bipolar transistors (DHBTs), we demonstrate that next generations of cutting-edge high speed electronic systems will benefit from (i) dedicated parameter extraction procedure,(ii) validation of model parameter set against on-wafer high-frequency measurements and deembedding methods using dedicated test structures in the beyond 110 GHz range,(iii) extrapolation of key figures of merits to scaled device dimensions leveraging a scalable model card.

For the parameter extraction procedure, we investigate the bias, temperature, and frequency dependence of two III-V double heterojunction bipolar transistors technologies based on InGaAs/InP and GaAsSb/InP processes, using a HiCuM/L2 compact model-based multi-geometry scalable parameter extraction methodology. Very good agreement between the model simulations and experimental data is demonstrated. Transistor currents and junction capacitances show very good scaling, thereby allowing the separation of intrinsic and peripheral effects. 

Since thermal management is more critical in III-V technologies compared to Si-based ones, especially from the reliability point of view, for a more accurate description of electrothermal effects in InP HBTs, a new scalable model for the thermal impedance of III-V DHBTs that has been developed based on the physics of heat diffusion within the HBT architecture. The heat flow through both the emitter metal layers and toward the substrate are taken into account for the model development. The model constitutes of individual thermal contributions of the different regions of the intrinsic device and metal layers. On-wafer low-frequency S-parameters measurements have been performed on several device geometries to study the device dynamic self-heating. The model has been validated against the measurements showing good accuracy and scalability. Time-domain pulse measurements have also been performed to correlate with the frequency domain S-parameter measurements. Moreover, accuracy of the scalable model card has been validated against measurements up to 330 GHz on the InP DHBTs leveraging on-wafer measurements on passive devices (open/short) up to 500 GHz, achieved through TRL calibration and E-M simulation of designed test-structures. Finally, prediction of future III-V HBT technologies figures-of-merit for scaled device dimensions of a state-of-the-art InP DHBT is performed by using the generated scalable model card.

Compact Modeling and Parameter Extraction Strategies for InP Double Heterojunction Bipolar Transistors

The paper presents briefly the software used in the Ultimate projet for HiCuM/L2 compact model scalable parameter extraction. The video explains the software functionnalities and the basic theory beyond scalable physics based compact model parameter extraction. An example is given for junction capacitances with a demo of the software operation.

SMACH: a tool for bipolar model parameter extraction

In this presentation we discuss the design, implementation and measurements of Tb/s/channel optical communication circuits realized in III-V Lab InP DHBT process. Realizations using InGaAs- and GaAsSb-base devices will be presented and compared, from transistor to circuit performances.
The design flow is detailed with specific focus on key trade-offs to reach >3-4 Vpp output swings conjugated with >100 GHz analog bandwidth as well as circuits’ design for electro-optical systems with new transmission formats using innovative DSP algorithms allowing higher transmission rates and increased spectral efficiency, like m-ary pulse-amplitude modulation (m-PAM) or quadrature amplitude modulation (m-QAM) formats. We also present the design and measurements of digital multiplexing selector operation at record 212-GBd speed and its system implementation for intra data-center communications.


Recent advances in high-speed and large-swing integrated circuits implemented in InGaAs and GaAsSb InP DHBT for terabit-class optical communications

In this talk, power amplifier MMICs developed for emerging D-band (110-170 GHz) wireless communication links using InP DHBT technology will be presented. Power amplifiers designed for millimeter-wave frequencies in general suffer from low gain of the transistors and high loss in the interconnect structures. To complicate matters, it is foreseen that higher order modulation formats will be employed to enhance the spectral efficiency in future mm-wave wireless communication links and this dictates strict linearity requirements to the power amplifiers. 
The talk will describe circuit topologies able to exhaust the potential of the InP DHBT technology used and present a low-loss interconnect strategy suitable for the implementation of matching networks and power combining structures. The experimental results of implemented D-band power amplifier MMICs will be presented.

InP DHBT based Power Amplifiers for D-band (110 – 170 GHz) Wireless Communication Links

High data rate communications and high bandwidth communication and sensing systems demand for wideband MMIC operating over a bandwidth with excess of 100 GHz. This talk will introduce such MMICs and their design and characterization challenges. The talk will focus on the widest bandwidth and bandwidth limits as well as the achievable output power, noise figure and gain, as well as constant time delay versus frequency of operation. FBH has demonstrated > 150 GHz bandwidth with output power levels > 12 dBm and concurrent noise-figures of < 9 dB, which allow for robust wideband receive modules and high power transmit modules. Results will also be shown on signal switches and preliminary results on wideband mixers. Routes towards even large bandwidths will be discussed and improvement in output power will be outlined.

Principles of Magnetic Sensing in Medical Microsystems

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Principles of Magnetic Sensing in Medical Microsystems

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Breaking the size barrier in CO2 sensing: the photo-acoustic CO2 sensor “SCD4x”

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