Italy

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9141.pdf

**Abstract:**

We present a circuit model for the co-simulation of spin qubits with their control and readout electronics in a common simulation environment. The model, completely simulated in Spectre, can handle all the basic operations on spin qubits, including readout and universal single and 2-qubit quantum gates. Furthermore, the model has the ability to include nonidealities such as decoherence and noisy control signals, thereby paving the way for circuit-technology co-optimization for spin-based quantum computation.

ESSCIRC ESSDERC 2021

Circuit Model for the Efficient Co-Simulation of Spin Qubits and Their Control &amp; Readout Circuitry

control electronics

circuit model

quantum gate

spin qubit

quantum computing

The Institute of Physics and IOP Publishing, in partnership with the Chinese Physical Society (CPS) and the University of Science and Technology of China (USTC) are proud to have brought together the international quantum science community online for this inaugural conference.


Early career and leading researchers from universities, industry and government worldwide came together to share, learn and collaborate on the latest research and emerging areas of high interest across quantum science and technology. The broad themes covered by Quantum 2020 included:

Quantum communication;
Quantum computing and quantum simulation;
Quantum sensing, metrology and imaging;
Quantum information theory, software and algorithms;
Quantum foundations;
Quantum technology in industry.
The four-day event featured talks from world-renowned scientists, interactive poster sessions and two exciting panel discussions on the themes of Quantum Technology in Industry and Quantum Technology Programmes Around the World.


You will need to [register](https://www.iopconferences.org/iop/frontend/reg/tRegisterEmailNew.csp?pageID=978403&eventID=1552&tempPersonID=536224) to obtain a ticket. . If you have already registered you should have been sent an email from Underline (to the email address that you registered with) with the subject line ‘Welcome to Quantum 2020’. This email includes your ticket for the event. 

If you have a ticket and are experiencing problems in accessing the event, please contact us. 

Quantum 2020

The Institute of Physics and IOP Publishing, in partnership with the Chinese Physical Society (CPS) and the University of Science and Technology of China (USTC) are proud to have brought together the international quantum science community online for this inaugural conference.

Early career and leading researchers from universities, industry and government worldwide came together to share, learn and collaborate on the latest research and emerging areas of high interest across quantum science and technology. 

Circuit Model for the Efficient Co-Simulation of Spin Qubits and Their Control & Readout Circuitry

technical paper

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.

Highlights:
* 3 joint keynote presentations
* 3 keynote presentations ESSCIRC
* 3 keynote presentations ESSDERC
* Invited papers with overall coverage of all aspects of advanced devices and circuits
* Presentation of IEEE and ESSCIRC/ESSDERC Awards
* Educational Events

JOINT PLENARY talks live broadcast: September 13, 2021<br>
ESSCIRC and ESSDERC KEYNOTE talks live broadcast: September 15, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Conference Technical sessions: September 14 – 16 – 17, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Educational Events: September 20-21-22, 2021<br>
(on demand videos available from September 6 until November 30, 2021)

**Please see here for the [ESSCIRC Guide](https://drive.google.com/file/d/10dghzuv4aQBty4QfTIY9Q8hXyqsue8Le/view?usp=sharing), [ESSDERC Guide](https://drive.google.com/file/d/10dx9y2tm9cHPDa4upNUYjfXCf44aPry5/view?usp=sharing), and the [Program at a Glance](https://drive.google.com/file/d/10eU0OLTXEpiNzI5hkqv4mSr43T8cedPP/view?usp=sharing)**


To access ESSCIRC ESSDERC 2021, you must pre-register for the conference.  Instructions on how to access the event will be provided directly to attendees and included on the ESSCIRC ESSDERC conference website. [Register now](https://www.esscirc-essderc2021.org/).

Please register for the ESSCIRC conference to join the event.

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.





**Please read the paper on the following link:**

https://1worldcontent.com/ess/9197.pdf

**Abstract:**

We here report a joint experimental and theoretical analysis of polarization switching in ferroelectric tunnel junctions. Our results show that the injection and trapping of charge into the ferroelectricdielectric stack has a large influence on the polarization switching. Our results are relevant to the physical understanding and to the design of the devices, and for both memory and memristor applications.

Polarization Switching and Interface Charges in BEOL Compatible Ferroelectric Tunnel Junctions

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9167.pdf

**Abstract:**

Magnetic Tunnel Junctions (MTJs) constitute thenovel memory element in STT-MRAM, which is ramping toproduction at major foundries as an eFlash replacement. MTJswitching exhibits a stochastic behaviour due to thermal fluctu-ations, which is modelled by s-LLGS and Fokker-Planck (FP)equations. This work quantifies the effect of thermal noise,and proposes and benchmarks a new formulation for MTJinitial conditions to accurately match thermal noise results fromstatistical simulation. Further, Finite Volume Method (FVM) andanalytical solvers for the FP equation are implemented andbenchmarked. To deploy an MTJ model for circuit design, itmust be calibrated against silicon data. To address this challenge,this work presents a scheme to fit MTJ parameters to a given setof measured current, switching time and error rate data points.

A Fokker-Planck Solver to Model MTJ Stochasticity

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9251.pdf

**Abstract:**

A semi-empirical model for the optical properties of SiGe alloys is proposed, based on physical considerations and the summation of Tauc-Lorentz and parametric oscillators. The key parameters of the oscillators are intuited from the optical transition and the symmetry points in the band structure. The model is fitted on extensive experimental data, for different temperatures, germanium concentrations and for both unstrained and strained on (100) Silicium wafer cases. This model can be used in optical simulation tools, in order to help the design of optoelectronic devices based on SiGe materials.

Semi-Empirical Model for Optical Properties of Si₁−xGex Alloys Accounting for Strain and Temperature

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9265.pdf

**Abstract:**

This paper presents a new method to reliably simulate the PDE and jitter for realistic 3D device simulations of SPAD devices. This method is based on the use of electric field lines to mimic the carriers\' trajectories, which allows the transformation of a 3D problem into a multitude of 1D problems. This idea is applied to the McIntyre model for breakdown avalanche probability to calculate PDE, but also for jitter prediction using a dedicated advection-diffusion model. The results obtained numerically are compared with an extensive series of measurements and show a good agreement on a wide variety of device designs.

Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter in Advanced SPAD Devices

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9213.pdf

**Abstract:**

In this work, a wafer-scale fabrication of biologically sensitive Si nanowire FET is demonstrated for pH sensing and electrical detection of DNA hybridization. Based on conventional “top-down” CMOS compatible technology, our bioFETs explore a wide range of design (nanowires (NW), nanoribbons (NR), and honeycomb (HC) structures) with opening access scaled down to only 120 nm. After device fabrication, IDS-VBG transfer and IDS-VDS output characteristics show a conventional n-type FET behavior with an ION/IOFF value higher than 105, as well as an increase of threshold voltage (VTH) as the NW width is reduced. Then, using a capacitive coupling in our dual-gated Si bioFETs, the pH sensitivity is enhanced with a pH response up to 600 mV/pH. Finally, the increase of threshold voltage of n-type SiNWs due to the hybridized target DNA molecules is successfully detected

Wafer-Scale Fabrication of Biologically Sensitive Si Nanowire FET: From pH Sensing to Electrical Detection of DNA Hybridization

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9258.pdf

**Abstract:**

A CMOS industry compatible integrated resonant SiN gyroscope was fabricated with the STMicroelectronics 300 mm Photonic R&D platform. For the first time, both active Si&Ge components and low loss SiN resonant ring are integrated in an optical gyroscope, based on a ring resonator coupled to a Mach-Zehnder Interferometer. Modeling of the shot noise resolution of our device is given, resulting in a resolution of 1.08deg/s. Experimental measurement show a static gain in sensitivity of 56% compared to a single ring with the same footprint.

Design and Fabrication of a Ring-Coupled Mach-Zehnder Interferometer Gyroscope

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9287.pdf

**Abstract:**

In this work we propose and experimentally validate a relaxation oscillator architecture with ultra-high tuning range (higher than 400%, from 5KHz to more than 25kHz when the control voltage is varied from 2.5 to 5V) that exploits the reversible metal-insulator transition in 2-terminal Vanadium Dioxide thin film devices loaded to a MOSFET common source amplifier. We propose and validate an analytical model that connects key output signal metrics to the intrinsic properties of the phase-change VO2 device employed. In addition, we demonstrate RF and optical sensing capabilities, with sensitivities of 4.64 Hz/dBm and 4.23 Hz/mW to RF and Optical Power, respectively.

High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9158.pdf

**Abstract:**

This paper benchmark the intrinsic trade-off between two essential modules of gate-all-around GAA nanosheet (NS)FETs viz. inner-spacers (ISPs) epi-induced stress in the channel. While having both ISPs and the stress is the best-case scenario for NSFET, it comes with enhanced process challenges and performance risks: poor epi-quality resulting in a no-channel stress scenario. While inner-spacers are important to parasitic capacitance reduction, we show that having intrinsic epi-stress is more beneficial and provides a better performance trade-off. We further evaluate the impact of inner-spacer κ-value and enhanced epi-volume for the two different cases. Finally, we have performed self-heating studies to show how skipping inner spacers can provide additional reduction in peak temperature.

Performance Trade-Off Scenarios for GAA Nanosheet FETs Considering Inner-Spacers and Epi-Induced Stress: Understanding & Mitigating Process Risks

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9202.pdf

**Abstract:**

We explore charge and spin transport properties of bilayer CrI3 controlled by an external electric field. To this aim, we focus on two different device structures, namely Monolayer/Bilayer/Monolayer CrI3 and Bilayer/Bilayer/Bilayer CrI3. The electric field is only applied to the central Bilayer-channel. In the first device, we inject only a single spin from the ferromagnetic Monolayer CrI3 which allows us to study its effect on the spin transport properties of a spin transistor. The second structure is based on the injection of both spins, that are later filtered, resulting in spin-filter device.

Electric-Field Controlled Spin Transport in Bilayer CrI3

"**Please read the paper on the following link:**

https://1worldcontent.com/ess/9226.pdf

**Abstract:**

Spin-Transfer Torque Magnetic Tunnel Junctions (STT-MTJ) are devices featuring stochastic properties. They are promising candidates for non-volatile memory or true random number generators. To design reliable hybrid CMOS circuits including STT-MTJs, one needs to use a compact model accounting for its stochasticity in the circuit simulations. This paper proposes a compact model that accurately mimics the MTJ stochastic switching behavior and meets the needs of fast execution time. The relevance of such a model together with its fast execution velocity are illustrated with a bitstream generator.

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Polarization Switching and Interface Charges in BEOL Compatible Ferroelectric Tunnel Junctions

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Next from ESSCIRC ESSDERC 2021

Polarization Switching and Interface Charges in BEOL Compatible Ferroelectric Tunnel Junctions

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Operation of a silicon quantum processor unit cell above one kelvin

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CONFERENCES

COMPANY

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