Italy

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9202.pdf

**Abstract:**

We explore charge and spin transport properties of bilayer CrI3 controlled by an external electric field. To this aim, we focus on two different device structures, namely Monolayer/Bilayer/Monolayer CrI3 and Bilayer/Bilayer/Bilayer CrI3. The electric field is only applied to the central Bilayer-channel. In the first device, we inject only a single spin from the ferromagnetic Monolayer CrI3 which allows us to study its effect on the spin transport properties of a spin transistor. The second structure is based on the injection of both spins, that are later filtered, resulting in spin-filter device.

ESSCIRC ESSDERC 2021

Electric-Field Controlled Spin Transport in Bilayer CrI3

negf

cri3

spin transport

[![](https://assets.underline.io/uploads/markdown_image/1/image/985c8a40b04e56675221c8549975de3c.png)](https://drive.google.com/file/d/1B70nPIeeeqdG4UU70NlYXuKVOHLRuJEo/view?usp=sharing)

### ** History of DRC**
The Device Research Conference (DRC) began in the pre-transistor era with the 1942 establishment of the Conference on Electron Device Research (CEDR). Following William Shockley’s 1948 CEDR presentation of the transistor device, the Solid-State Device Research Conference (SSDRC) was established, with invitation-only attendance.

In the ensuing decades, many exciting firsts were presented at SSDRC, including the use of impurity diffusion in silicon and germanium, the first practical MOSFET, and the first lattice-matched heterojunction.

In 1969, under the leadership or Herbert Kroemer and Cal Quate, the CEDR and SSDRC merged into DRC. In 1970, attendance was opened to all, and the first DRAM (dynamic random-access memory), room temperature lasers, and first CCD (charge-coupled device) were reported—all in the same 1970 DRC meeting!

1976 saw the first official coordination of tandem meetings between DRC and the Electronic Materials Conference (EMC) to bring together the electronic materials and device communities—a custom which persists to this day. In 1991, DRC began publishing its digest with IEEE; they can all be found [here on IEEE Xplore](https://ieeexplore.ieee.org/xpl/conhome/1000199/all-proceedings). Throughout this period, DRC featured reports of many novel and record-setting devices, including the HEMT (High Electron Mobility Transistor), VCSEL (Vertical Cavity Surface Emitting Laser), HBT (Heterojunction Bipolar Transistor), and nanoscale MOSFETs.

In recent years, DRC has continued to be the world’s premier forum to present innovative semiconductor device research with work on organic thin film transistors, graphene and carbon nanotube transistors, and 2D materials all featuring prominently in the 1990s through to the present day. In 2017, we celebrated DRC’s 75th anniversary with special sessions and an [article in the Journal of the Electron Device Society](https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8168249&isnumber=8232486). DRC technical topics continue to evolve with emerging device trends such as memory devices, quantum devices, optoelectronics/photonics, and wide bandgap power devices to reflect the exciting work being done by a diverse community of device engineers around the globe.

Today, as we look forward to the next 75+ years of device innovation, DRC continues to lead the way in showcasing top-caliber research, facilitating vibrant discussion and debate and acting as a platform to nurture the next generation of device engineers. We welcome you to join us at the next DRC!

To learn more about DRC's history, please see [Aaron Franklin, Debdeep Jena and Deji Akinwande, "75 Years of the Device Research Conference—A History Worth Repeating," in IEEE Journal of the Electron Devices Society, vol. 6, pp. 116-120, 2018. doi: 10.1109/JEDS.2017.2780778](https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=8168249&isnumber=8232486).

### **Topics**
* Biological Devices
* Devices for Extreme Conditions
* Heterogeneously Integrated Devices
* Memory Devices
* Modeling and Simulation of Devices
* Nanoscale and Vacuum Devices
* Optoelectronic and Optical Devices
* Other Emerging Devices
* Power Devices
* Quantum Devices
* RF and Terahertz Devices
* Spintronic and Magnetic Devices
* Thin-film Devices
* Wide-bandgap Devices
 
### **Invited Speakers**
* Patrick Fay, University of Notre Dame
* Susanne Hoffmann-Eifert, Peter Grünberg Institute
* Sanghyeon Kim, Korea Advanced Institute of Science and Technology
* Sriram Krishnamoorthy, University of California, Santa Barbara
* Mario Lanza, King Abdullah University of Science and Technology
* Xiuling Li, The University of Texas at Austin
* Marko Radosavljevic, Intel Corporation
* Siddharth Rajan, The Ohio State University
* Giordano Scappucci, Delft University of Technology
* Fisher Yu, University of Arkansas
* Wenjuan Zhu, University of Illinois at Urbana-Champaign




Registration is required to attend this event. If you have not already done so, please use the link below to register for a ticket to the conference:

https://www.mrs.org/drc-2022/registration

Registration Is Required

DRC 2022

DRC continues to be the world’s premier forum to present innovative semiconductor device research with work on organic thin film transistors, graphene and carbon nanotube transistors, and 2D materials all featuring prominently in the 1990s through to the present day. In 2017, we celebrated DRC’s 75th anniversary with special sessions and an article in the Journal of the Electron Device Society. 
DRC technical topics continue to evolve with emerging device trends such as memory devices, quantum devices, optoelectronics/photonics, and wide bandgap power devices to reflect the exciting work being done by a diverse community of device engineers around the globe.

technical paper

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.

Highlights:
* 3 joint keynote presentations
* 3 keynote presentations ESSCIRC
* 3 keynote presentations ESSDERC
* Invited papers with overall coverage of all aspects of advanced devices and circuits
* Presentation of IEEE and ESSCIRC/ESSDERC Awards
* Educational Events

JOINT PLENARY talks live broadcast: September 13, 2021<br>
ESSCIRC and ESSDERC KEYNOTE talks live broadcast: September 15, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Conference Technical sessions: September 14 – 16 – 17, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Educational Events: September 20-21-22, 2021<br>
(on demand videos available from September 6 until November 30, 2021)

**Please see here for the [ESSCIRC Guide](https://drive.google.com/file/d/10dghzuv4aQBty4QfTIY9Q8hXyqsue8Le/view?usp=sharing), [ESSDERC Guide](https://drive.google.com/file/d/10dx9y2tm9cHPDa4upNUYjfXCf44aPry5/view?usp=sharing), and the [Program at a Glance](https://drive.google.com/file/d/10eU0OLTXEpiNzI5hkqv4mSr43T8cedPP/view?usp=sharing)**


To access ESSCIRC ESSDERC 2021, you must pre-register for the conference.  Instructions on how to access the event will be provided directly to attendees and included on the ESSCIRC ESSDERC conference website. [Register now](https://www.esscirc-essderc2021.org/).

Please register for the ESSCIRC conference to join the event.

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.





**Please read the paper on the following link:**

https://ieeexplore.ieee.org/document/9178366

**Abstract:**

In this paper, an ultra-broadband D-band wireless front-end transmitter (TX) in 45 nm CMOS SOI is proposed. Based on channel bonding and 64-QAM modulation, it achieves 84.8 Gb/s data-rate by combining 8×2.16 GHz baseband channels. The eight baseband channels are aggregated at Intermediate Frequency (IF) in two sets of four channels and then up-converted to two adjacent sub-bands at D-band. The required millimeter-wave Local Oscillators (LO) are generated on-chip. The Intermediate Frequency band is 57.96 GHz to 66.66 GHz, and the considered transmission band is from 140.895 GHz to 158.265 GHz. The presented TX integrates two up-converter mixers, two power amplifiers and an on-chip power combiner in addition to the two LO generator with a total DC power consumption of 420 mW from a 1-V voltage supply, and occupies a compact active area of 2.98 mm2.

A 84.48Gb/S 64-QAM CMOS D-Band channel-Bonding Tx front-End with Integrated multi-Lo Frequency Generation

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9197.pdf

**Abstract:**

We here report a joint experimental and theoretical analysis of polarization switching in ferroelectric tunnel junctions. Our results show that the injection and trapping of charge into the ferroelectricdielectric stack has a large influence on the polarization switching. Our results are relevant to the physical understanding and to the design of the devices, and for both memory and memristor applications.

Polarization Switching and Interface Charges in BEOL Compatible Ferroelectric Tunnel Junctions

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9167.pdf

**Abstract:**

Magnetic Tunnel Junctions (MTJs) constitute thenovel memory element in STT-MRAM, which is ramping toproduction at major foundries as an eFlash replacement. MTJswitching exhibits a stochastic behaviour due to thermal fluctu-ations, which is modelled by s-LLGS and Fokker-Planck (FP)equations. This work quantifies the effect of thermal noise,and proposes and benchmarks a new formulation for MTJinitial conditions to accurately match thermal noise results fromstatistical simulation. Further, Finite Volume Method (FVM) andanalytical solvers for the FP equation are implemented andbenchmarked. To deploy an MTJ model for circuit design, itmust be calibrated against silicon data. To address this challenge,this work presents a scheme to fit MTJ parameters to a given setof measured current, switching time and error rate data points.

A Fokker-Planck Solver to Model MTJ Stochasticity

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9251.pdf

**Abstract:**

A semi-empirical model for the optical properties of SiGe alloys is proposed, based on physical considerations and the summation of Tauc-Lorentz and parametric oscillators. The key parameters of the oscillators are intuited from the optical transition and the symmetry points in the band structure. The model is fitted on extensive experimental data, for different temperatures, germanium concentrations and for both unstrained and strained on (100) Silicium wafer cases. This model can be used in optical simulation tools, in order to help the design of optoelectronic devices based on SiGe materials.

Semi-Empirical Model for Optical Properties of Si₁−xGex Alloys Accounting for Strain and Temperature

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9265.pdf

**Abstract:**

This paper presents a new method to reliably simulate the PDE and jitter for realistic 3D device simulations of SPAD devices. This method is based on the use of electric field lines to mimic the carriers\' trajectories, which allows the transformation of a 3D problem into a multitude of 1D problems. This idea is applied to the McIntyre model for breakdown avalanche probability to calculate PDE, but also for jitter prediction using a dedicated advection-diffusion model. The results obtained numerically are compared with an extensive series of measurements and show a good agreement on a wide variety of device designs.

Comprehensive Modeling and Characterization of Photon Detection Efficiency and Jitter in Advanced SPAD Devices

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9213.pdf

**Abstract:**

In this work, a wafer-scale fabrication of biologically sensitive Si nanowire FET is demonstrated for pH sensing and electrical detection of DNA hybridization. Based on conventional “top-down” CMOS compatible technology, our bioFETs explore a wide range of design (nanowires (NW), nanoribbons (NR), and honeycomb (HC) structures) with opening access scaled down to only 120 nm. After device fabrication, IDS-VBG transfer and IDS-VDS output characteristics show a conventional n-type FET behavior with an ION/IOFF value higher than 105, as well as an increase of threshold voltage (VTH) as the NW width is reduced. Then, using a capacitive coupling in our dual-gated Si bioFETs, the pH sensitivity is enhanced with a pH response up to 600 mV/pH. Finally, the increase of threshold voltage of n-type SiNWs due to the hybridized target DNA molecules is successfully detected

Wafer-Scale Fabrication of Biologically Sensitive Si Nanowire FET: From pH Sensing to Electrical Detection of DNA Hybridization

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9258.pdf

**Abstract:**

A CMOS industry compatible integrated resonant SiN gyroscope was fabricated with the STMicroelectronics 300 mm Photonic R&D platform. For the first time, both active Si&Ge components and low loss SiN resonant ring are integrated in an optical gyroscope, based on a ring resonator coupled to a Mach-Zehnder Interferometer. Modeling of the shot noise resolution of our device is given, resulting in a resolution of 1.08deg/s. Experimental measurement show a static gain in sensitivity of 56% compared to a single ring with the same footprint.

Design and Fabrication of a Ring-Coupled Mach-Zehnder Interferometer Gyroscope

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9287.pdf

**Abstract:**

In this work we propose and experimentally validate a relaxation oscillator architecture with ultra-high tuning range (higher than 400%, from 5KHz to more than 25kHz when the control voltage is varied from 2.5 to 5V) that exploits the reversible metal-insulator transition in 2-terminal Vanadium Dioxide thin film devices loaded to a MOSFET common source amplifier. We propose and validate an analytical model that connects key output signal metrics to the intrinsic properties of the phase-change VO2 device employed. In addition, we demonstrate RF and optical sensing capabilities, with sensitivities of 4.64 Hz/dBm and 4.23 Hz/mW to RF and Optical Power, respectively.

High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9158.pdf

**Abstract:**

This paper benchmark the intrinsic trade-off between two essential modules of gate-all-around GAA nanosheet (NS)FETs viz. inner-spacers (ISPs) epi-induced stress in the channel. While having both ISPs and the stress is the best-case scenario for NSFET, it comes with enhanced process challenges and performance risks: poor epi-quality resulting in a no-channel stress scenario. While inner-spacers are important to parasitic capacitance reduction, we show that having intrinsic epi-stress is more beneficial and provides a better performance trade-off. We further evaluate the impact of inner-spacer κ-value and enhanced epi-volume for the two different cases. Finally, we have performed self-heating studies to show how skipping inner spacers can provide additional reduction in peak temperature.

Performance Trade-Off Scenarios for GAA Nanosheet FETs Considering Inner-Spacers and Epi-Induced Stress: Understanding & Mitigating Process Risks

"**Please read the paper on the following link:**

https://1worldcontent.com/ess/9226.pdf

**Abstract:**

Spin-Transfer Torque Magnetic Tunnel Junctions (STT-MTJ) are devices featuring stochastic properties. They are promising candidates for non-volatile memory or true random number generators. To design reliable hybrid CMOS circuits including STT-MTJs, one needs to use a compact model accounting for its stochasticity in the circuit simulations. This paper proposes a compact model that accurately mimics the MTJ stochastic switching behavior and meets the needs of fast execution time. The relevance of such a model together with its fast execution velocity are illustrated with a bitstream generator.

Electric-Field Controlled Spin Transport in Bilayer CrI3

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Electric-Field Controlled Spin Transport in Bilayer CrI3

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Next from ESSCIRC ESSDERC 2021

A 84.48Gb/S 64-QAM CMOS D-Band channel-Bonding Tx front-End with Integrated multi-Lo Frequency Generation

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Late News: Are Argon and Nitrogen Gases Really Inert to Graphene Devices

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