Italy

**Please read the paper on the following link:**

https://ieeexplore.ieee.org/document/9212567

**Abstract:**

To pave the way for system-on-chip MEMS confinement up to 50 GHz, the mechanical properties of a CMOS back-end-of-line (BEOL) are studied by analytic and finite element approaches. In particular, the two main directions of vertical and horizontal wave propagation are investigated. With respect to the symmetry of the BEOL, the movement through the nonperiodic horizontal layers is described by the Rayleigh-Lamb equation. It is shown that our finite element method (FEM) approach, preventing Brillouin zone folding, can be employed in simulations of these structures, since the results are in excellent accordance to the corresponding analytical solutions. The vertical propagation through the periodic stack on the other hand is subject to phononic crystal effects resulting in Bragg-like band gaps (BGs) for either a certain or every polarization. Factoring in both types of propagation, it is demonstrated by our FEM simulations how these BGs can be tailored to specific values through variations in the BEOL layers to improve the quality factor of monolithically integrated MEMS devices.

ESSCIRC ESSDERC 2021

Polarization Independent Band Gaps in CMOS Back-End-of-Line for Monolithic High-Q MEMS Resonator Confinement

micromechanical devices

finite element analysis

cmos process

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.

Highlights:
* 3 joint keynote presentations
* 3 keynote presentations ESSCIRC
* 3 keynote presentations ESSDERC
* Invited papers with overall coverage of all aspects of advanced devices and circuits
* Presentation of IEEE and ESSCIRC/ESSDERC Awards
* Educational Events

JOINT PLENARY talks live broadcast: September 13, 2021<br>
ESSCIRC and ESSDERC KEYNOTE talks live broadcast: September 15, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Conference Technical sessions: September 14 – 16 – 17, 2021<br>
LIVE Q&A INTERACTIVE sessions for all Educational Events: September 20-21-22, 2021<br>
(on demand videos available from September 6 until November 30, 2021)

**Please see here for the [ESSCIRC Guide](https://drive.google.com/file/d/10dghzuv4aQBty4QfTIY9Q8hXyqsue8Le/view?usp=sharing), [ESSDERC Guide](https://drive.google.com/file/d/10dx9y2tm9cHPDa4upNUYjfXCf44aPry5/view?usp=sharing), and the [Program at a Glance](https://drive.google.com/file/d/10eU0OLTXEpiNzI5hkqv4mSr43T8cedPP/view?usp=sharing)**


To access ESSCIRC ESSDERC 2021, you must pre-register for the conference.  Instructions on how to access the event will be provided directly to attendees and included on the ESSCIRC ESSDERC conference website. [Register now](https://www.esscirc-essderc2021.org/).

Please register for the ESSCIRC conference to join the event.

The aim of ESSCIRC and ESSDERC is to provide an annual European forum for the presentation and discussion of recent advances in solid-state devices and circuits.
The level of integration for system-on-chip design is rapidly increasing.

This is made available by advances in semiconductor technology. Therefore, more than ever before, a deeper interaction among technologists, device experts, IC designers, and system designers is necessary. ESSCIRC and ESSDERC are governed by a common Steering Committee and share Plenary Keynote Presentations and Joint Sessions bridging both device and circuit communities.





technical paper

**Please read the paper on the following link:**

https://ieeexplore.ieee.org/document/9174655

**Abstract:**

A new differential method for accurate extraction of electrical parameters of High Electron Mobility Transistor (HEMT) devices for GaN technology is proposed. This method, presented here for the first time, is used to study the mobility degradation with gate length, allowing an analysis of the contribution of the gate edge region to the total MIS-HEMT device conductance. First, an analytical model is proposed to account for the relative conduction of the edges and the main flat part of the channel HEMTs. Second, the differential method allows the split-CV mobility extraction of each part, allowing a precise analysis of the resistive contribution of each region of the HEMT devices. This study has been performed over a large range of channel lengths for two normally-off HEMT GaN wafers having different recess depths.

Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method

**Please read the paper on the following link:**

https://ieeexplore.ieee.org/document/9186308

**Abstract:**

We investigate the reliability of SiGe HBTs in 55-nm technology under mixed-mode stress. We perform electrical characterization of increased base current degradation at different collector-base voltages. The adopted modeling approach to reproduce experimental data accounts for self-heating and electric fields distribution allowing to match the deviation from the power-law behavior.

Characterization and TCAD Modeling of Mixed-Mode Stress Induced by Impact Ionization in Scaled SiGe HBTs

**Please read the paper on the following link:**

https://ieeexplore.ieee.org/document/9204768

**Abstract:**

Analytic doping profiles and contact resistivities are adjusted to reproduce measured transfer characteristics of state-of-the-art n-type and p-type FinFETs by Monte Carlo device simulation. The results are used to compare the performance of nanosheets (NSs) and FinFETs at advanced-node device dimensions. It is found that the ON-current normalized by the effective gate width reduces for a higher number of sheets due to a higher access resistance of the lower-lying sheets. In order to reach the same absolute current level of FinFETs with a fin height of 55 nm, more than two sheets for n-type and about four sheets for the p-type NSs with a NS width of 16 nmare needed, respectively. This technology computer-aided design (TCAD) approach can serve as input for design-technology cooptimization (DTCO) of advanced devices.

Monte Carlo Comparison of n-Type and p-Type Nanosheets with FinFETs: Effect of the Number of Sheets

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9064.pdf

**Abstract:**

This paper proposes a light intensity sensing circuit for a millimeter-scale system tracking monarch butterfly migration. The system targets to be mounted on a butterfly and record light intensity during its migration.The proposed circuit contributes to light measurement of the system by consuming negative net energy, averaging light level for 1-minute sleep mode, and suppressing temperature sensitivity. A prototype system achieves energy autonomy at >300lx. A prototype circuit obtains a 3σ inaccuracy of ±1.78% and σ/µ of 2.7% from 10lx to 100klx, a temperature sensitivity of 0.035%/°C from -20 to 85°C, and a supply sensitivity of 1.08%/V from 3.6 to 4.2V.

An Energy Autonomous Light Intensity Sensor for Monarch Butterfly Migration Tracking

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9101.pdf

**Abstract:**

This paper presents an energy efficient high voltage(HV) ultrasonic driver for ultrasonic haptic feedback, designed to drive Piezo electric micro machined transducers (PMUT). To achieve low power consumption while driving large capacitive load of a PMUT device, advanced charge recycling (ACR) ispresented reducing the reactive power consumption without off-chip supply generation. To facilitate ACR in a compact footprint a bidirectional high voltage switch is proposed. The ultrasonic driver is able to drive a transducer capacitance of 240pF upto 36V swing with a frequency of 250kHz, only consuming 0.2CV2f power, outperforming bulky coil-based solutions. Re-alised in a high voltage 0.18μmbulk BCD technology, the driver only occupies 0.16mm2.

A 36V Ultrasonic Driver for Haptic Feedback Using Advanced Charge Recycling Achieving 0.20CV2f Power Consumption

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9126.pdf

**Abstract:**

This paper presents a compact analog front-end circuit capable of integrating with a 100µm-pitch 2D. ultrasound transducer array. To realize continuous time-gain compensation, it consists of two variable gain stages, both of which employ a novel complementary current-steering network to realize continuously-variable gain. Per channel, the AFE occupies only 0.025 mm2 and consumes 0.8 mW. It achieves an input noise density of 1.31 pA/√Hz and a gain error of ±0.4 dB, corresponding to the gain-error performance that is 2.5 times better than the prior art.

A Pitch-Matched Analog Front-End with Continuous Time-Gain Compensation for High-Density Ultrasound Transducer Arrays

**Please read the paper on the following link:**

https://1worldcontent.com/ess/9186.pdf

**Abstract:**

This work presents the first solar cell (SC)-powered biofuel cell (BFC)-input biosensing system with hybrid pulse interval modulation (PIM) and pulse density modulation (PDM) LED driving capability for stand-alone RF-less continuous glucose monitoring (CGM) contact lenses, which allows diabetes patients to obtain CGM level information without any external devices. Power supply from on-lens SCs can eliminate wireless power delivery, and LED implementation can eliminate wireless communication. The measured power of 28 nW/144 nW at PIM/PDM mode with a 0.31 V/0.39 V supply voltage can be managed by the on-lens SCs, enabling a fully stand-alone operation under office-room ambient light.

A 0.5 mm2 0.31 V/0.39 V 28 nW/144 nW 65 nm CMOS Solar Cell-Powered Biofuel Cell-Input Biosensing System with PIM/PDM LED Driving for Stand-Alone RF-Less Continuous Glucose Monitoring Contact Lens

**Please read the paper on the following link:**

https://ieeexplore.ieee.org/document/9169659

**Abstract:**

This work presents the first on-chip bio-inspired reservoir computer (RC) prototype implemented in 65nm CMOS. The RC comprises 50 time-multiplexed neurons, and each neuron embeds a strong non-linearity in a feedback loop. The RC applies a non-linear transformation to the input and projects it to high-dimensional space, thus allowing linear separation by a simple logistic regression (LR) layer implemented off-chip. We demonstrate real-time stress detection from electrocardiogram (ECG) signals using the RC. The RC achieves 93% classification accuracy, which is 6% better than state-of-the-art digital classifiers. Operating at 40kHz, the prototype consumes 27.5nJ/classification, which is 7x lower than state-of-the-art ECG processors performing similar complexity classification tasks.

A Bio-Inspired Reservoir-Computer for Real-Time Stress Detection from ECG Signal

**Please read the paper on the following link:**

https://ieeexplore.ieee.org/document/9194762

**Abstract:**

In this paper a stitched array of 768x64 pixels for X-ray dental imaging is presented. The sensor architecture allows to increase the frame rate up to 900 fps thanks to a pipeline approach that minimizes the deadtime between consecutive frames. A column-based ADC converts pixel values in digital form while an external FPGA performs the operation of TDI accumulation, thus increasing the SNR. Internal programmable gain allows to achieve a maximum sensitivity of 2.6 LSB/nGy and, at the same time, to extend the dynamic range of the sensor in case of high intensity. The final system consists of two sensors each one having a size of 74.5x9 mm, assembled in a PCB and coupled with a high sensitive columnar thallium-doped cesium iodide (CsI(Tl)) scintillator for X-ray conversion. The sensor, fabricated in a standard CMOS 0.15um technology with stitching approach, shows a pixel size of 97 um

Luximos: a 768x64 900-fps Tileable Pipelined X-Ray CMOS Image Sensor for Dental Imaging with 2.6 LSB/nGy Sensitivity

**Please read the paper on the following link:**

https://ieeexplore.ieee.org/document/9174634

**Abstract:**

This paper presents the design and experimental characterization of an ultrasound rangefinder system. A new distance measurement method is proposed for determining the relative position among sensor nodes that are operated in a collision and multipath rich environment, while needing no common time reference between them. A 65nm CMOS technology has been used to build the sensor nodes, which comprise an on-chip receiver and transmitter. The proposed rangefinder system is characterized up to 1m in air and has a range resolution of 6.5mm, while dissipating 2.67 μJ per measurement.

Polarization Independent Band Gaps in CMOS Back-End-of-Line for Monolithic High-Q MEMS Resonator Confinement

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Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method

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Polarization Independent Band Gaps in CMOS Back-End-of-Line for Monolithic High-Q MEMS Resonator Confinement

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Next from ESSCIRC ESSDERC 2021

Analysis of MIS-HEMT Device Edge Behavior for GaN Technology Using New Differential Method

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Mechanical Band Gap Formation in Anisotropic CMOS Back-End-of-Line Stacks for Monolithic High-Q MEMS Resonator Confinement

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PRESENTATIONS

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