VIDEO DOI: https://doi.org/10.48448/8wfz-mh55

technical paper

EMC 2021

June 24, 2021

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Why Two-Dimensional Semiconductors Generally Have Low Electron Mobility

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Effect of Acceptor Traps at Positive Polarization Interfaces on the Charge and Mobility of Holes in N-Polar P-Type GaN/(AlN/AlGaN) Superlattices
technical paper

Effect of Acceptor Traps at Positive Polarization Interfaces on the Charge and Mobility of Holes in N-Polar P-Type GaN/(AlN/AlGaN) Superlattices

EMC 2021

+2Athith Krishna
Athith Krishna and 4 other authors

24 June 2021

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