VIDEO DOI: https://doi.org/10.48448/e4m5-rd74

technical paper

EMC 2021

June 24, 2021

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Reduction of the Tc and Suppression of the △Tc of VO2 Epitaxial Films on TiO2 Buffered Sapphire Substrate

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High-Speed Two-Dimensional Solid-State Non-Volatile Memory Based on Electric Double Layer Gating Using a Monolayer Electrolyte
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High-Speed Two-Dimensional Solid-State Non-Volatile Memory Based on Electric Double Layer Gating Using a Monolayer Electrolyte

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Shubham Awate and 4 other authors

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