poster

DRC 2021

June 21, 2021

New York, United States

Ferroelectric Nondoped HfO2 Blocking Layer Formation for Hf-based FeNOS Analog Memory Applications

DOI: 10.48448/0et6-qg59

Please log in to leave a comment

Downloads

PaperTranscript English (automatic)

Next from DRC 2021

technical paper

Heterogeneous Integration, Advanced Packaging, Dielets and Chiplets - why the hype?

DRC 2021

Subramanian Iyer

21 June 2021

Similar lecture

poster

MFSFET with Ferroelectric HfN for Analog Memory Application

DRC 2022

Ohmi Shun-ichiro

27 May 2022

Stay up to date with the latest Underline news!

PRESENTATIONS

  • All Lectures
  • For Librarians
  • Resource Center
  • Free Trial
Underline Science, Inc.
1216 Broadway, 2nd Floor, New York, NY 10001, USA

© 2023 Underline - All rights reserved