This paper demonstrates the robustness of Infineon’s XHPTM 2 modules equipped with 3.3 kV CoolSiCTM MOSFETs. These devices were tested through standard reliability tests such as HTRB, HTGB (or static HV humidity storage tests), through robustness validation approaches investigating gate-switching stability with and without load, and for condensation robustness. Results from non-static HV humidity storage investigations are also discussed proving the ruggedness of these modules under application-relevant electrical conditions.