United States

In this study, we introduce a thick GaN-on-Si pseudo-vertical p-n diode grown with Selective Area Growth (SAG). For the first time, we measured temperature-dependent current-voltage characteristics in the range of 303 to 413 K to explore the origin of leakage conduction in a p-n diode produced via SAG.  Two conduction mechanismd are identified as Frenkel-Poole Emission and Variable Range Hopping . Additionally, employed TCAD simulations and  Lock-in Thermography  to investigate and pinpoint the leakage current.

IRPS 2025 Main Conference

Numerical and Thermal Analysis of Reverse Leakage Current of Pseudo-Vertical GaN p-n Diodes Grown with Selective Area Growth

tcad simulations

reverse leakage current

pseudo-vertical gan p-n diodes

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

**Topics of interest**

* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency or Compact Converters
* Safe Operating Areas of Wide Bandgap Devices, Including Short Circuit, Spike, & Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Hard-Switched & Soft-Switched Application Analysis
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, & Grid Power Systems
* Wide Band Gap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN (New)
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging (New)

### Please select the button below to view and download the session papers. The Virtual Proceedings PDF can be downloaded [here.](https://drive.google.com/file/d/171y2_u63V-pc9-bC-eZgHLzJou2oCfST/view?usp=sharing)

[![](https://assets.underline.io/uploads/markdown_image/1/image/c8e1b0a2881d3bb0a75ece4761f43c9f.png)](https://drive.google.com/drive/folders/1GWEFLzH6K4aUBaJiBFJDw4x9sKLTl6-g?usp=sharing)


This event requires a registration to attend, please register [here](https://web.cvent.com/event/536cea3d-4c0d-4d50-8939-529979d80785/summary) to purchase a ticket. 

IEEE WiPDA 2021

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

poster

#### Welcome to the 63rd IEEE International Reliability Physics Symposium (IRPS)! 
**The 2025 IEEE International Reliability Physics Symposium (IRPS) were held in Monterey, California from March 30 to April 3, 2025, presented as an in-person conference, with a virtual component available.** 

[![](https://assets.underline.io/uploads/markdown_image/1/image/9cc005f94b4ba4a81918eb49e0a51057.png)](https://underline.io/events/475/reception)
[![](https://assets.underline.io/uploads/markdown_image/1/image/acae953ba70ae2a57eed7b0250d6dd7d.png)](https://www.irps.org/)
 

**IRPS 2025 General Chair Welcome Message**

On behalf of the Management Committee of the IEEE International Reliability Physics Symposium (IRPS) and the IRPS Board of Directors, it gives me great pleasure to extend a warm welcome to all who are planning to attend the IRPS 2025, scheduled to take place from March 30-April 3, 2025, in Monterey, CA. Over its 63-year history, IRPS has solidified its position as the premiere conference for engineers and scientists to present new and original work in the field of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and other parts of the world, IRPS aims to deepen our understanding of reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS offers diverse opportunities for attendees to enhance their knowledge and understanding of all aspects of microelectronics reliability. It is also an outstanding chance to meet and network with reliability colleagues from around the world.

The IRPS 2025 technical activities will begin with two days of a total of twenty tutorial sessions covering a broad spectrum of emerging reliability topics including the issues on semiconductor devices, circuit and system reliability. These sessions are devoted to both newcomers as well as experts. Three reliability Year in Review (YIR) talks focusing on Gate-All-Around Devices, 2D Materials, and Advanced Packaging Technology Breakthrough to Drive AI/HPC Innovation will be provided on Monday after the tutorials.
The IRPS 2025 technical program will feature four distinguished keynote talks in the plenary sessions delivered by Dr. Min Cao from TSMC and Dr. Choon Lee from Intel Corporation on Tuesday, Dr. Elif Balkas from Wolfspeed on Wednesday, and Dr. Shankar Venkataraman from Applied Materials, Inc on Thursday. The technical program, organized into three parallel tracks, consists of contributed and 22 invited papers from leaders in industry and academia. Additionally, two invited talks by recipients of paper awards from our sister conferences, European Symposium on Reliability of Electron Device Failure Physics and Analysis (ESREF) 2024 and the International Integrated Reliability Workshop (IIRW) 2024, will be given in the technical program. 

Tuesday evening will host twelve workshops, offering an opportunity for in-depth, face-to-face discussions on emerging reliability challenges, including the three IRPS 2025 focus topics. A poster session will be held in the Monterey Ballroom outside the symposium building on Wednesday evening. Both events are sure to be lively. The IRPS 2025 and the International ESD Workshop (IEW) will be co-hosted with IEW registrants participating in both IRPS and IEW programs.
Finally, I would like to extend my extreme gratitude to our patrons, exhibitors, and all participants for their invaluable support, which makes IRPS successful.
Please enjoy the IRPS 2025!

**Susumu Shuto, General Chair**
 of 2025 IRPS Management Committee


**About IRPS** 
The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. Drawing participants from the United States, Europe, Asia, and all parts of the world, IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. IRPS provides numerous opportunities for attendees to increase their knowledge and understanding of all aspects of microelectronics reliability, and to meet and network with reliability colleagues from around the world.

You need to log in with the email address you registered with. Access credentials have been sent to your email. 

Please be sure to check your spam and other email folders if you do not see an email confirmation right away.

Please log in to explore this event.

It looks like you are not registered for this event. 

To access the site, please log in using the email address you registered with or in case you are not yet registered, you can still register [**here**](https://www.irps.org/registration-fees). 

Please register!

The IEEE International Reliability Physics Symposium (IRPS) is the premiere conference for engineers and scientists to present new and original work in the area of microelectronics reliability. IRPS seeks to understand the reliability of semiconductor devices, integrated circuits, and microelectronic assemblies through an improved understanding of both the physics of failure as well as the application environment. 

Downloads

Similar lecture

Etched and Regrown Vertical GaN Junction Barrier Schottky Diodes

Stay up to date with the latest Underline news!

PRESENTATIONS

CONFERENCES

COMPANY

RESOURCES