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keywords:
phase-change memory
multi-layer engineering
ge-rich gesbte
This study investigates the by Multi-Layer (ML) engineering of off‑stoichiometric Ge-rich GeSbTe alloys to improve performance and reduce electrical variability while maintaining high-temperature stability. We show that tuning the Ge layer thickness and Nitrogen content of Ge(N)//GeSbTe ML stacks improves the layer stability at high temperature, the resistance window, and the SET reliability. Thicker Ge layers enhance the ML integrity, while higher N content improves the resistance window but compromises SET stability at high temperatures...