This study investigates the repetitive short-circuit ruggedness of the three main SiC MOSFET gate channel designs available in the market: planar, symmetrical, and asymmetrical trench. The DUTs were stressed with similar short-circuit energy density. Electrical parameters such as drain current, gate-source were monitored over 1000 short-circuit cycles. Multiple samples from four manufacturers were utilized to build enough statistical significance. The outcomes showed the planar gate structures were weaker against RSC than trench counterparts.