Tutorials

**Presenter:** Jayant Baliga
 
 **Abstract:** The role of an academic in the area of SiC power devices can be categorized as: (1) Fundamental Theoretical Predictions; (2) Fundamental Scientific Knowledge; (3) Fundamental Device Structures; (4) Device Structural Innovations; (5) Device Physics and Analysis; and (6) Technology Feasibility Studies. This paper provides examples of these activities during my past 40 years of effort in this field as a retrospective. New prospective device ideas that will have a strong impact on power electronics in the future are then discussed.

An Academic’s Perspective on SiC Power Devices: Retrospection and Prognostication

**Presenter:** Dr. Kevin Matocha
 
 **Abstract:** The adoption of SiC Schottky diodes and then SiC MOSFETs in solar inverter applications was the first wave to evaluate the capabilities of these new devices in challenging applications and environments. With the observed and projected growth of demand for high-efficiency, high-voltage power semiconductor devices in automotive traction and EV chargers, challenges arise to supply SiC devices into these demanding applications. Current and emerging SiC power device manufacturers are developing strategies to be able to support the accelerating need for SiC power device supply. onsemi is building on its strength in end-to-end solutions of silicon power semiconductor devices, starting with silicon crystal growth and epitaxy, through die fabrication and final package and module assembly. onsemi has extended its existing silicon-based power semi portfolio into SiC-based power modules. To achieve this, we continue to invest heavily in SiC wafer and epitaxy, as well as expanding wafer fab capacity to meet the growing demand. Additionally, onsemi continues to develop advanced SiC power modules to meet the specific needs of automotive and industrial customers. At onsemi, we strongly believe that this vertically-integrated strategy will help meet the growing customer needs for high-efficiency SiC power modules.

Toward Vertical Integration to Scale the Supply of High Performance SiC Power Modules for Demanding Applications

**Presenter:** Vincent Meric
 
 **Abstract:** There is little debate nowadays about the merit of GaN or SiC material for Power Electronics applications compared to the Silicon-based technologies. Power supplies and power inverter continue to drive most of the Wide Bandgap material adoption with Gallium Nitride used nowadays in nearly every power supply and Silicon Carbide as the material of choice for high efficiency power inverters for long range Electric Vehicle (EV). To enable such widespread adoption into new applications, MOCVD equipment needs to ensure not only to meet the tightest material performance requirements but also to provide solutions enabling cost reduction year after year. In addition, the current semiconductor ramps, and material constraints are accelerate the transition to larger substrate size and the focus on integrability into Silicon factory as well as tool productivity per unit for clean room floor area. We will present how AIXTRON is addressing those markets with new series of high throughput solutions for Wide Bandgap materials and how this contribute to bolst the output of existing factories.

New high throughout solutions for Wide Bandgap power semiconductors

**Presenter:** Dr. Shahin Sharifzadeh
 
 **Abstract:** As the world looks beyond silicon for the next generation of power electronics, NexGen Vertical GaN™, the world’s first GaN-on-GaN power semiconductor, unlocks the full potential of Gallium Nitride (GaN). It is the only wide band gap power semiconductor that provides high-voltage capabilities up to 4kV, switching frequencies up to 10MHz, and avalanche and short-circuit robustness. This makes it an ideal power semiconductor for applications from LED Lighting and Computing to Data Centers and Electric Vehicles. NexGen is reinventing power electronics by leveraging this breakthrough technology and building a scalable, software-configurable power platform that enables the smallest, lightest, and most efficient power systems.

Vertical GaN “Technology of Future” – Now a Reality with NexGen Power Systems

**Presenter:** Andrew Allerman
 
 **Abstract:** Ultra-wide-bandgap (UWBG) AlGaN alloys (Eg > 4 eV) are appealing for the next-generation of high-voltage power devices due to their superior material properties. Most notable is that the critical electrical field scales as the bandgap to the ~ 2.0-2.5 power. Thus, power diodes employing Al-rich AlGaN alloys (4.0 < Eg < 6.2 eV) are expected to operate at higher breakdown voltages with thinner and more heavily-doped drift regions, leading to lower resistive losses and higher power density compared to Si-, SiC- and even GaN-based devices. Additionally, the formation of AlGaN-based heterojunctions and the utilization of polarization fields for doping offer device design options not currently possible for devices based on SiC and other ultra-wide bandgap semiconductors such as diamond and b-Ga2O3. We will present polarization doping of both p- and n-type AlGaN alloys in compositions where conventional impurity doping fails and employ polarization doping to fabricate Al0.7Ga0.3N PN diodes with kilovolt breakdown voltages. In addition to appealing material properties such has high critical electric field, we have found that the electrical characteristics of Schottky diodes and regrown PN junctions in AlGaN alloys show a surprising robustness to residual, sub-surface etch damage that degrades the performance and thus complicates the fabrication of GaN devices. This robustness to etch damage has led to the demonstration of PN diodes where the p-anode was formed by regrowth in an etched well which resulted in diodes that exhibit reverse breakdown voltages of 1.8 kV and are indistinguishable from continuously grown PN diodes. A major challenge to realizing vertically conducting AlGaN power devices is the lack of a native, conducting substrate. To address the need for vertically conducting device architectures, we present an AlGaN overgrowth process on previously-patterned, conducting GaN substrates that have been used to fabricate PN diodes with 7 mm thick drift layers in Al0.3Ga0.7N that reach breakdown voltages of 1 kV. These and other examples to be presented illustrate the potential of AlGaN alloys for realizing kilovolt-class power diodes and transistors for next generation power systems.

Ultra-Wide Bandgap AlGaN Alloys for Power Electronics

Supply and Cost of Substrates for Compound Semiconductors

Session Chairs: Aivars Lelis and Victor Veliadis

1.A. SiC Devices - Novel Devices

1.B GaN Devices – Advanced Characterization

1.C SiC Devices - Device Reliability and Robustness

Download the proceedings [here](https://underline.io/events/372/lounge)
 
 
 The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.
 
 **Topics of interest**
* Heteroepitaxial & Bulk Materials Growth
* Gate Dielectrics & Surface Passivation
* Device Structures & Fabrication Techniques
* Device Characterization & Modeling
* Very-High Efficiency Or Compact Converters
* Safe Operating Areas Of Wide Bandgap Devices, including Short Circuit, Spike, &Transient Tolerance
* Harsh Environment (High Temperature) Operation & Reliability
* Packaging Power Modules & ICs
* Gate Drive & Other Auxiliary Circuits
* High-Performance Passive Components
* Hard-Switched & Soft-Switched Application Analysis
* Applications in Renewable Energy & Energy Storage, Transportation, Industrial Drives, Grid Power Systems, Space and Aerospace
* Wide Bandgap System Design Philosophies & Strategies
* Radio Frequency (RF) GaN
* Technology Roadmap of Wide Bandgap Including Devices, Applications and Packaging

You must register to attend this event. If you haven't done so already, please use the link below to register for the event. All registered attendees will have access to the event site on November 4th.

Registration Is Required

IEEE WiPDA 2022

The IEEE Workshop on Wide Bandgap Power Devices & Applications (WiPDA) provides a forum for device scientists, circuit designers, & application engineers from the Power Electronics & Electron Devices Societies to share technology updates, research findings, experience & potential applications.

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