**Organizers:** 
Sumeet Gupta, Purdue University, USA 
 Asif Khan, Georgia Institute of Technology, USA

**Presenters:** 
Louis Hutin, The French Alternative Energies and Atomic Energy Commission, France
 Ravi Pillarisetty, Intel Corporation, USA
 Heike Riel, IBM Research -Zurich, Switzerland
 Pramey Upadhyaya, Purdue University, USA

**[Download the DRC 2021 Short Course Slides](https://drive.google.com/file/d/1yUyK-wWI2TSpEbQEXmlefP_YXTSNUUy6/view?usp=sharing)**

DRC Short Course:  Quantum Computing Devices and Materials



**Chairs:** Becky (R.L.) Peterson and Zhihong Chen

![](https://assets.underline.io/uploads/markdown_image/1/image/6e6bf514d62f9d8b785079bdad2f13b1.png)

**Speaker:** Philip Kim, Harvard University, USA

**Bio:**  Professor Philip Kim received his B.S in physics at Seoul National University in 1990 and received his Ph. D. in Applied Physics from Harvard University in 1999. He was Miller Postdoctoral Fellow in Physics from University of California, Berkeley during 1999-2001. He then joined in Department of Physics at Columbia University as a faculty member during 2002-2014. Since 2014, he moves to Harvard University, where he is Professor of Physics and Professor Applied Physics.

**Title of talk:**  Stacking van der Waals atomic layers: quest for new quantum materials 

**Brief Description of Your Work:**  By stacking these 2D quantum materials, one can also create atomic-scale heterostructures with a wide variety of electronic and optical properties. We demonstrate the enhanced electronic and optoelectronic performances in the vdW heterostructures, suggesting that these a few atom thick interfaces may provide a fundamental platform to realize novel physical phenomena. In this talk, we will discuss several research efforts to realize unusual quasiparticle pairing mesoscopic devices based on stacked vdW interfaces between 2-dimensional materials.



![](https://assets.underline.io/uploads/markdown_image/1/image/cf15574dcbf7cd0250c715d68a401096.png)

**Speaker:** Shuji Nakamura, University of California Santa Barbara, USA

**Bio:**  Shuji Nakamura obtained B.E., M.S., and Ph.D. degrees in Electrical Engineering from the University of Tokushima, Japan in 1977, 1979, and 1994, respectively. He joined Nichia Chemical Industries Ltd in 1979.  
In 1993 and 1995 he developed the first group-III nitride-based high-brightness blue and green LEDs. He also developed the first group-III nitride-based violet laser diodes (LDs) in 1995. 
Since 2000, he has been a professor of Materials and Electrical & Computer Engineering at the University of California, Santa Barbara. He is the 2014 Nobel Laureate in Physics for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources.

**Title of talk:**  III-Nitride Based LEDs and Laser Diodes

**Brief Description of Your Work:**  III-nitride-based ultra-short cavity micro-cavity (MC-)LED with a cavity length of 200 nm which had a peak external quantum efficiency (EQE) of 7.2% was demonstrated, which value is almost the same as that of a conventional c-plane micro-LED. The demonstration of MC-LEDs with a high EQE of 7.3% and a single mode emission should pave the way for the application of display and others. Current develoments of III-nitride based micro-LED and VCSEL are also mentioned.

Monday Plenary Session



**Session chair:** Tania Roy, University of Central Florida, USA



Session 1 - 2D Devices



**Session chair:** Jean Anne C. Incorvia, The University of Texas at Austin, USA


Session 2 - Memory Devices


**Session chair:** Sukwon Choi, The Pennsylvania State University, USA




Session 3 – Wide Bandgap Devices I

![](https://assets.underline.io/uploads/markdown_image/1/image/277fc2927b9b944b97886ae6e2d81683.png)

**Speaker:** Nicky Lu, Etron Technology, Inc. and Invention & Collaboration Lab, Taiwan, ROC

**Bio:** Dr. Nicky Lu, Chairman and Founder of Etron Technology, is an inventor of several key IC designs/technologies and serial founder of several companies, from start-ups to publicly listed ones including Etron, Ardentec and Global Unichip. He has dedicated 43 years of his career to worldwide IC design and the semiconductor industry.

Dr. Lu is a Member of National Academy of Engineering (NAE) of USA and an IEEE Fellow. Dr. Lu received Ph.D. in EE from Stanford University. He worked for the IBM Research and then IBM HQs (1982-90) and won an IBM Corporate Award. 

In early 1990s, Dr. Lu was a co-architect/leader creating Taiwan’s 8-inch-wafer and advanced Logic/SRAM/DRAM technologies to equip Taiwan semiconductor industry with leading-edge technology capabilities, which has thus enabled and shaped Taiwan semiconductor and integrated circuits industries to today’s prominent position for worldwide economics.

He was the Chair of WSC (World Semiconductor Council, 2014-15) and Chair of TSIA (Taiwan Semiconductor Industry Association, 2013-17). Dr. Lu holds over 40 US patents and has published more than 60 technical papers. Dr Lu is a recipient of the "IEEE 1998 Solid-State Circuits D.O. Pederson Award" for his leading contributions in high-speed dynamic memory design and memory cell device technology.

**Title of talk:** Optimizing Monolithic and Heterogeneous Integration to Create Intelligent-Grand-Scale-Integration for Smart MicroSystems

**Brief Description of Your Work:** This paper presents Four perspectives on how the Silicon-Based IC Industry continues to grow through optimizing Monolithic and Heterogeneous Integration (MHI) of various new materials, devices, circuits, chips, software, AI and systems (MDCCSAS).

I.	Expansion of MI & HI with Silicon-Centric Technologies Using Scaling Methodologies 1.0 to 4.0
 II.	Refining Current MI through Inventions by Holistic MDCCSAS Optimization
 III.	Entering Intelligent-Grand-Scale-Integration (IGSI) to Enable AI-driven Self-Smart MicroSystems and Networks, Which Proceeds to Super-Intelligent Systems
 IV.	Moving toward $1 Trillion Silicon Industry Nourished by Intelligence^N Applications"

Tuesday Plenary Session



**Session chair:** Cezar Zota, IBM Research - Zurich, Switzerland


Session 4 - Sensors, Optoelectronics, and Integration



**Session chair:** Tony Low, University of Minnesota, USA




Session 5 - Quantum and Spintronic Devices



**Session chair:** Hans-Joachim Würfl, Ferdinand Braun Institut, Germany




Session 6 -  Power Devices 



**Session chair:** Andrew Carter, Teledyne Scientific & Imaging, USA




Session 7 - RF/Terahertz Devices

**[DOWNLOAD THE DRC 2021 DIGEST](https://drive.google.com/file/d/17_-pkYf4IBbVuNYgohTf0iZJORVGp_uN/view?usp=sharing)**

**[DOWNLOAD A COPY OF THE FINAL DRC PROGRAM](https://drive.google.com/file/d/1Ek8UIDCowpLq0z2hXav5tn67FboxS03N/view?usp=sharing)**

For almost eight decades, the Device Research Conference (DRC) has brought together leading scientists, researchers and students to share their latest discoveries in device science, technology and modeling. Notably, many of the first public disclosures of key device technologies were made at the DRC. This year marks the 79th anniversary of the DRC—the longest running device research meeting in the world. As we commemorate this meeting, the high-caliber technical sessions will be highlighted by plenary talks and invited talks by international research pioneers and leaders behind modern electronic technology.

Given the ongoing global health concerns associated with COVID-19 (Coronavirus), the DRC leadership has decided to hold the 2021 Device Research Conference in a virtual (online) format. This follows an enormously successful 2020 DRC held virtually, in which we had record attendance and worldwide participation of more than 875 attendees from 33 countries.

The 2021 Conference will feature:

* Informative, timely short courses in rapidly developing fields
* Oral and poster presentations on electronic/photonic device experiments and simulations
* Plenary and invited presentations given by worldwide leaders
* Evening “rump” session
* Strong student participation and Student Paper Awards

DRC is held in coordination with the Electronic Materials Conference (EMC), which will occur the same week, from June 23-25. As has happened in person in past years, in 2021, the virtual DRC and EMC sessions on the shared day, Wednesday, June 23, will be open to all attendees from both conferences. This recognizes the strong interaction between device and electronic materials research and provides fruitful exchanges of information between attendees of both Conferences. For information on the 63rd Electronic Materials Conference, please visit the [EMC 2021 website.](https://www.mrs.org/63rd-emc/)

2021 DRC individual presentation videos will become available in Underline at the end of each technical session. A recording of each full live session with Q&A will be posted later during the conference. To facilitate re-viewing of recorded talks and sessions, the DRC Underline site will remain open through 11:59pm (US EDT) on July 7th. DRC Conference registration will remain open at www.mrs.org/drc-2021/registration through June 30th.

Thank you for joining us at the 2021 Device Research Conference!

**General Chair**
 Zhihong Chen, Purdue University

**Technical Program Chair**
 Becky (R.L.) Peterson, University of Michigan

**Technical Program Vice-Chair**
 Gregg Jessen, BAE Systems

You can register for the 79th Device Research Conference with the following link. https://www.mrs.org/drc-2021

DRC 2021

For almost eight decades, the Device Research Conference (DRC) has brought together leading scientists, researchers and students to share their latest discoveries in device science, technology and modeling. Notably, many of the first public disclosures of key device technologies were made at the DRC. This year marks the 79th anniversary of the DRC—the longest running device research meeting in the world. As we commemorate this meeting, the high-caliber technical sessions will be highlighted by plenary talks and invited talks by international research pioneers and leaders behind modern electronic technology.

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