The kappa-opioid receptor (KOR) has been a target of recent interest in the treatment of alcohol use disorder, due to its role in negatively reinforced ethanol drinking, whereby aversive stimuli can promote ethanol intake. The KOR is densely expressed in the nucleus accumbens (NAc) on terminals of afferent neurons from the ventral tegmental area (VTA), where their activation has been found to suppress dopamine release such as is observed during alcohol withdrawal. We have previously found that KOR agonism differs along the rostro-caudal axis of the NAc shell, and that there may be a sex-related difference in baseline levels of ethanol intake. In the present study, we sought to determine if KOR stimulation in the rostral NAc shell could reverse effects of dopamine afferent activation on ethanol drinking. In Experiments 1 and 2, we used Long-Evans rats, as well as female transgenic tyrosine hydroxylase (TH)-Cre rats on a Long-Evans background in Experiment 3, which have a TH promoter directing expression of Cre recombinase in dopamine-containing cells, and we allowed them to drink under an intermittent access model, which establishes binge-like ethanol drinking. After the establishment of stable drinking, we bilaterally infused an excitatory designer receptors exclusively activated by designer drugs (DREADD) virus in the VTA of Experiment 2 groups, and a Cre-dependent excitatory DREADD in the VTA of the Experiment 3 group. After time for transduction, we injected into the NAc shell (1) the DREADD agonist, clozapine-N-oxide (CNO) (Experiments 2-3), (2) the KOR agonist, U50,488H (Experiments 1-3), (3) CNO + U50,488H (Experiments 2-3), and (4) saline vehicle (Experiments 1-3), counterbalanced in a Latin-Square design, and measured subsequent ethanol drinking. Surprisingly, we found that both U50,488H and CNO, independently and combined, enhanced ethanol drinking in high-level drinkers, and that these effects were not additive. Furthermore, the opposite trend was seen in low-level drinkers, suggesting a phenotype-dependent effect. These results suggest that both the DREADD activation and the KOR agonist microinjection have a similar net effect on dopamine release into the NAc shell, and that these effects depended on the phenotype of the drinker. The findings support the use of KOR antagonism as a therapy for alcohol use disorder, despite its potential unconventional effects on the dopamine system, and the overall use of individualized medication that considers an individual’s sex and phenotype.

Effects of Dopamine and Kappa Opioid Receptor Activity in the Rostral Nucleus Accumbens Shell on Ethanol Drinking in Rats

Spin-orbit torques (SOTs) originating from a ferromagnetic spin source have attracted much attention for spintronics devices because they offer field-free switching of perpendicular magnetization [1]. Cobalt-based Heusler alloy Co2MnAl (CMA) is attractive for the ferromagnetic spin source because it is theoretically predicted to be a magnetic Weyl semimetal with strong spin-orbit interaction [2]. In this work, we demonstrated SOT-induced magnetization switching for a perpendicularly magnetized CoFeB (CFB) under zero magnetic field by using an in-plane magnetized CMA spin source. We also measured modulation of coercive field by the SOTs and investigated the effective perpendicular magnetic field Heff induced by them.
A heterostructure consisting of, from the substrate side, MgO(10)/CMA(5)/Ti(3)/CoFeB(1.2)/MgO(3)/Ta(1) was deposited on an MgO(100) substrate (numbers in parentheses are nominal thickness in nm). Then, the stack was processed into Hall-bar devices with a 5-μm-wide channel. From measurements on transverse resistance Ryx reflecting the anomalous Hall effect (AHE), the CFB layer showed a clear perpendicular magnetic easy axis, whereas the CMA had an in-plane magnetic easy axis. After aligning magnetization of CMA, MCMA, to parallel or antiparallel to the channel direction, we studied SOT-induced magnetization switching of CFB layer by applying current pulses Ipulse to the channel in the absence of magnetic field. Clear field-free switching of CFB magnetization was observed in both cases. The polarity of SOT-induced magnetization switching with respect to Ipulse was reversed depending on the relative direction of MCMA to Ipulse (Fig. 1). Furthermore, we investigated Heff induced by SOTs with Heff = [Hc(+I) - Hc(-I)]/2, where Hc(I) is a coercive field determined from AHE measurements, and I is a channel current. We observed sizable effective field of μ0Heff = 1 mT at I = 3 mA. Importantly, the sign of Heff was also reversed depending on the relative direction of MCMA to I. These results suggest that the possible origin of the SOTs is spin-orbit precession [1]. 
**References** [1] S. C. Baek et al., Nat. Mater., Vol. 17, p.509 (2018)
[2] J. Kübler, C. Felser, EPL, Vol. 114, 47005 (2016)
 

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Field free switching of perpendicular magnetization by spin

Recently, two-dimensional (2D) materials have emerged as a replacement for heavy metals (HM) because of their large spin-charge interconversion efficiency [1]. In this work, we explore a promising and relatively less explored 2D monochalcogenide SnS for spintronics application. Through symmetry arguments, it is proposed that SnS should exhibit unconventional spin-orbit torques (SOTs), which is very important for energy-efficient switching of magnets with perpendicular magnetic anisotropy (PMA) [1]. SnS thin films up to monolayer (ML) thickness have been grown on Si/SiO2 substrates using pulsed laser deposition (PLD) technique at 200 °C and room temperature (RT). Two typical Raman active modes (Ag and B3g) [2] can be distinguished in the acquired Raman spectra [Fig. 1]. We performed spin-torque ferromagnetic resonance (STFMR) measurements to investigate the SOTs in SnS/Ni80Fe20 system. For ST-FMR measurements, we fabricated SnS/Ni80Fe20 rectangular microstrips using the lift-off technique. For STFMR measurements, an in-plane RF current of frequency varying from 4 GHz to 8 GHz was applied to the bilayer in the presence of an external magnetic field (H). We measured the voltage (Vmix) across the device, which originated due to the mixing of AMR and RF current. We determine the in-plane and out-of-plane torque components by fitting the Vmix with a sum of symmetric and antisymmetric Lorentzian. We performed a complete angular dependence of the STFMR signal by varying the magnetization angle φ in the sample plane. In addition to a conventional sin2φcosφ (Vy,s) dependence, we found sin2φ (Vz,s) dependence [Fig. 2], which is a signature of unconventional out-of-plane anti-damping like torque [3]. Thus our results suggest that SnS can be used to achieve efficient switching of magnetic devices with PMA via the strong unconventional out-of-plane anti-damping like torque. 
**References** [1] Y. Liu et. al., ACS Nano 14, 9389 (2020).
[2] A.N. Mehta et. al., J. Microsc. 268, 276 (2017).
[3] D. MacNeill, et al., Nat. Phys. 13, 300 (2017). 

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Evidence of unconventional spin orbit torque in SnS/Ni80Fe20 heterostructures

Spin-orbit torque characterization techniques generally require Hall cross that generally demands lithography resources and time. As the interest in exploring materials for improved SOT performance surges, an efficient technique to characterize SOT efficiencies with minimal processes, equipment, and time is highly desirable. Here, we demonstrate a lithography-free technique to determine the spin-orbit torque efficiency in perpendicular magnetic anisotropy ferromagnetic heterostructure. By utilizing a customized fzour-point probe in a rhombus geometry, harmonic Hall measurement was performed on a blanket films of Pt/Co/Ti structure to characterize the spin-orbit torque efficiency. Due to the non-uniform current distribution across the blanket film, a correction factor is experimentally evaluated using the ratio of the damping-like field measured on the blanket film to that of a fabricated Hall device with identical material heterostructure. Additionally, this correction factor is analytically derived and experimentally shown to be determined by the configuration of the probes and is independent of the structure material. Our measurement reveals that by performing a single calibration process for the particular set of probes, the same correction factor was validated on a second ferromagnetic heterostructure, Ti/Pt/Co/Ta hence it can be applied to other SOT films stack measurements. Our four-probe harmonic Hall technique provides an alternative and swift way for SOT investigations by eliminating multiple lithography processes necessary in conventional approaches.

Blanket Film Spin Orbit Torque Characterization via Four Probe Measurement

The actual mechanisms occurring at interfaces underlying the Dzyaloshinskii-Moriya interaction (i-DMI) remain largely an open question in nanomagnetism. In this study, we investigate the origin of the i-DMI, aiming at estimating how independent the DMI contributions of the two interfaces of a FM layer are and what their relative weight in the effective DMI amplitude is. The effective DMI is measured by the study of the asymmetric domain wall propagation in the presence of an in-plane magnetic field, in Pt|Co|M stacks. These measurements are completed by Brillouin light scattering (BLS) measurements. We then explore the correlation between the effective i-DMI and the properties of metal M, namely, its atomic number, electronegativity, and work function. A clear linear relationship is found between the i-DMI and the work function difference at the Co|M interface (ΔΦ) [1,2]. We define Δφ = φM - φCo. This result is a strong evidence of the independent DMI contributions of the two interfaces for the chosen Co thickness (1 nm). These findings may guide the optimization of the magnetic properties of future spintronic devices.
This work has been supported by DARPA TEE program grant (MIPR HR-0011831554), ANR grant TOPSKY (ANR-17-CE24-0025), FLAG-ERA SographMEM (ANR-15-GRFL-0005), and the Horizon2020 Framework Program of the European Commission, under FET Proactive Grant Agreement No. 824123 (SKYTOP) and under Marie Sklodowska- FQ Curie Grant Agreement No. 754303 for supporting J.P.G together with the LABEX LANEF in Grenoble (ANR-10-LABX-0051). Univ. Paris-Saclay, CNRS INP, Sesame IMAGeSPIN project (nEX039175) and the LABEX NanoSaclay (ANR10 LABX0035, BLS@PSay and SPiCY projects) are acknowledged for the BLS equipment. 
**References** [1] F. Ajejas et al., Phys. Rev. Mat., June 2022
[2] Y.-K. Park et al., NPG Asia Mater. 10, 995 (2018)
 
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Interfacial potential gradient modulates Dzyaloshinskii Moriya interaction in Pt|Co|Metal multilayers

The search for efficient approaches to realize local switching of magnetic moments in spintronic devices has attracted intense interest. In particular, spin-orbit torque (SOT) that arises from materials with large spin-orbit coupling (SOC) offers a new pathway for energy-efficient and fast magnetic information storage. Recent studies on SOT-induced magnetization switching and dynamics in magnetic heterostructures have shown promise for SOT-MRAM [1-2]. We have demonstrated electrical manipulation of magnetization and exchange bias (EB) in an antiferromagnet/ferromagnet (AFM/FM) based device via SOT [3]. Perpendicular EB reversal across AFM IrMn and FM [Co/Pt]2 multilayer has been shown, both in extended and confined geometries. In three-terminal perpendicular magnetic tunnel junction (MTJ) devices (Figs. 1a and 1b), we have achieved the switching of the magnetization and EB using the SOT (Fig. 1c). Both high- and low- resistances have been observed at zero magnetic field during EB switching (Fig. 1d). These findings provide a new direction in exploring the electrical control of EB in SOT magnetic random access memory (SOT-MRAM). In another study, we have demonstrated that the magnon current excited in an insulating NiO AFM layer by an electronic spin current in an all-oxide epitaxial SrRuO3/NiO/SrIrO3 heterostructure is effective for manipulating the perpendicular magnetization in the SrRuO3 layer [4]. Fig. 2 shows the schematic of the heterostructure and TEM image of the interfaces and the current driven magnetization switching. Interestingly, the threshold current density to generate a sufficient magnon current to manipulate the magnetization was one order of magnitude smaller than that in conventional metallic systems. These results suggest a route for developing highly efficient magnon based all-oxide spintronic devices. 

This work has been supported by KAUST, SRC/NIST SMART center, and US-NSF. 
**References** [1] I.M. Miron, et al, Nature, 476 (2011) 189. 
[2] L.Q. Liu, et al, Science, 336 (2012) 555. 
[3]. B. Fang, et al, Advanced Functional Materials,2022, 32, 2112406. 
[4]. D.X. Zheng, et al, Advanced Materials, revised and resubmitted. 

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High efficiency magnetization switching via electrical manipulation of exchange bias and magnon current

Weyl semimetals can generate large current-induced spin-orbit torques (SOT) that can manipulate the magnetization dynamics in the ferromagnetic materials, and thus play an important role in spintronic devices. Due to their concomitant reduced symmetries, Weyl semimetals are also promising for generating SOTs with novel symmetries that may be able to switch perpendicular magnetic anisotropy thin films. Recently, the Td phase MoTe2, which is Weyl semimetal, has attracted a lot of attentions in the field of spintronics, due to its theoretically predicted SOT efficiencies that are even larger than those of WTe2 [1]. Here, we studied the effects of processing conditions on the stoichiometry and crystal structure of the magnetron-sputtered MoTe2 films by using Rutherford backscattering and X-ray diffraction. Furthermore, we identified different phases of the sputtered MoTe2 thin films using Raman spectroscopy, and we have observed a stable Td semimetal phase even at room temperature. The Td phase is generally considered to be a low-temperature phase and only appears at temperatures below 250 K, and at room temperatures, MoTe2 will be in the 1Tâ€™ monoclinic phase or the 2H hexagonal phase [2]. We have also observed dimensionality-dependent phase transitions from the Td to the 1Tâ€™ phase at room temperature for sputtered MoTe2 thin films as the characteristic peak for the Td phase MoTe2 gradually shifts from 264 cm-1 to 259 cm-1(the Raman peak position for the 1Tâ€™ phase), as the thickness of the sputtered films increases (shown in Figure 1). Finally, SOT efficiencies of the MoTe2 thin films were measured via spin-torque ferromagnetic resonance (ST-FMR) on MoTe2/Ni80Fe20 heterostructures and we observed a large novel SOT due to the spins with out-of-plane polarization directions in both the symmetric and anti-symmetric components of the homodyne mixing voltage signals (shown in Figure 2). The efficiencies of the novel damping-like and field-like SOT are estimated to be 16% and 27%, respectively.

Spin orbit Torques in Magnetron

Spin accumulation, which is created by an electrical current flowing in a nanomagnet, affects the strength of spin-orbit interaction (SO) and anisotropy field Hani in a nanomagnet. The reduction of Hani and SO by the current may cause a magnetization reversal. As a result, the data, which is encoded into the current, is memorized by means of two equilibrium magnetization directions of the nanomagnet. Recently, we have developed a high-precision measurement method of Hani and coefficient of spin-orbit interaction kso [1]. kso is a numerical parameter characterizing the SO strength.
Figure 1 shows kso vs. Hani measured in FeCoB nanomagnets.The SO strength is larger in nanomagnet, which contains several ferromagnetic layers (shown by stars) in comparison with nanomagnets containing only one ferromagnetic layer(shown by triangles). It means that the SO strength depends on the number of interfaces. The SO strength increases with an increase of the number of FeB layers up to 5 FeB layers. Further increase of the number of FeB layers causes a decrease of kso due to accumulated interface roughness.
Figure 2 compares current dependency of Hani for a single and multilayer nanomagnet. In the multilayer nanomagnet with a strong SO, the reduction of Hani is large of about 25 % and is nearly independent of current polarity. In contrast, in the single- layer nanomagnet with a weak SO, Hani changes almost linearly with the current only with a small symmetrical contribution due to heating, but the change is small of about 6%. Even such a small change of Hani is sufficient for magnetization reversal, when the conditions for the parametric resonance are met [2,3]. 
**References** [1] https://www.youtube.com/watch?v=LmvYN5hG-90
[2] V. Zayets, arXiv:2104.13008 (2021).
[3] V. Zayets, IOA-07, MMM (2021)
 
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Peculiarities of measured dependencies of strength of spin orbit interaction and anisotropy field on current density in FeCoB nanomagnet

Optimization of materials for efficient spin current generation and magnetization switching in ferromagnet(FM)/heavy-metal(HM) bilayers is of interest for SOT-MRAM and other applications. Experimentally, alloys of Pt with other elements have been studied as the HM source of spin current, some of which were found to increase the effective spin-Hall angle ξj DL and/or the dampinglike (DL) torque efficiency ξE DL in FM|Pt1−xXx bilayers. Here we use the tight-binding LMTO implementation of the nonequilibrium Green’s function (NEGF) technique [1] to calculate the DL SOT efficiencies for Fe0.75Co0.25|Pt1−xXx bilayers with different alloying elements X, as a function of concentration. The bcc Fe0.75Co0.25 alloy is chosen for the FM layer due to its good lattice matching with fcc Pt and low Gilbert damping. The atomic potentials are obtained using the coherent potential approximation, and the torquances are then evaluated via supercell averaging over substitutional disorder. We find that the largest SOT efficiency ξE DL is achieved by alloying with 20% Au or 10% Rh. Using the calculated residual resistivities of the Pt1−xXx alloys, we estimate the effective spin-Hall angles ξj DL in the alloyed systems. The results are compared with available experimental data.
This work was supported by NSF grant No. DMR-1916275. 
**References** D.Pashov et al. Comput. Phys. Commun. (2020)

Effect of alloying on spin orbit torque in Fe0.75Co0.25|Pt1−xXx bilayers

Spin currents and spin-torques generated by spin-orbit coupling (SOC) are exploited in spintronics to meet the high data demand in information technology. Nowadays, the large SOC of 5d non-magnetic heavy metals (HMs) is required to generate a pure spin current by the spin Hall effect (SHE). In turn, the pure spin current generates a spin-orbit torque (SOT) on an attached magnetic layer [1]. 

It is generally accepted that in magnetic materials, the spin polarization of the generated spin current is aligned with the direction of the magnetization due to the exchange interaction. The generation of such spin current is referred to as the Spin Anomalous Hall Effect (SAHE) [2]. More recent theoretical works [3,4] have shown that the latter description is incomplete for magnetic materials with large spin-orbit coupling. In this case, the spin polarization can be preserved from alignment with the magnetization, as demonstrated in ferrimagnets [5]. The total spin current is therefore the sum of SAHE-like and SHE-like spin currents [2-4] as depicted in Fig 1. The SAHE-like spin current cannot induce a torque on the magnetization because the spin polarization is aligned with the magnetization. However, the SHE-like symmetry can generate a torque if the spin current is absorbed outside the layer. We refer this torque as self-torque because the material is the source of the torque on its magnetization. 

In this talk, we present the study of a ferrimagnet with strong spin-orbit coupling: GdFeCo. The SAHE and SHE spin current contributions are studied by complementary Spin Torque Ferromagnetic Resonance (ST-FMR) techniques and self-torque characterization were performed by means of harmonic Hall voltage measurements. We show in GdFeCo/Cu/NiFe trilayer that the ST-FMR voltage at NiFe resonance that is sensitive to GdFeCo SHE-like symmetry does not change sign across the magnetic compensation temperature [6]. The addition of a dc current to ST-FMR experiments allows to quantify the total contribution [6,7]. Additionally, we show in GdFeCo/Cu that the effective fields associated to the self-torques are amplified in the vicinity of the magnetic compensation temperature of the ferrimagnet and reverse their sign across it [7] (see Fig 2). Finally, we present more experimental results with signatures that highlight the difference between external SOT and self-torque taking advantage of characteristics temperatures in ferrimagnets. This study paves the way for further research into the generation of spin currents in ferrimagnets and the exploitation of self-torque generated in single magnetic layer for spintronic devices. 

This work was supported partially from Agence Nationale de la Recherche (France) under contract N° ANR-18-CE24-0008 (MISSION), ANR-19-CE24-0016-01 (TOPTRONICS) and ANR-17-CE24-0025 (TOPSKY), from the French PIA project “Lorraine Universite d’Excellence”, reference ANR-15IDEX-04-LUE. This study is partially funded by MSCA-RISE 2020-Project N°101007825 - ULTIMATE-I. D. C.-B., A.Y.A.C and H. D, acknowledge SPIN IJL team for their internship fellow 2018, 2019 and 2020, respectively. DCB also thanks “LUE Graduated” program internship 2019 from “Lorraine Université d’Excellence”. 
**References** [1] A. Manchon et al., Reviews of Modern Physics, vol. 91, no 3, p. 035004, (2019). 
[2] T. Taniguchi et al., Physical Review Applied, vol. 3, no 4, p. 044001, (2015). 
[3] V. P. Amin, et al., Physical Review B, vol. 99, no 22, p. 220405, (2019). 
[4] K-W. Kim, et al., Physical Review Letters, vol. 125, no 20, p. 207205, (2020). 
[5] Y. Lim, et al., Physical Review B, vol. 103, no 2, p. 024443, (2021). 
[6] H. Damas, et al., p. 2200035, PSS RLL (2022). 
[7] D. Céspedes, H. Damas, et al., Advanced Materials, vol. 33, no 12, p. 2007047, (2021). 

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Spin currents generation and self Spin Orbit torque in GdFeCo ferrimagnet

Spin Hall nano-oscillators (SHNOs) are miniaturized, ultra-broadband, microwave signal generators based on the spin Hall effect that converts a direct charge current into a transverse pure spin current, producing a spin-transfer torque into an adjacent ferromagnetic layer, which in turn excites spinwave (SW) auto-oscillations. Nano-constriction SHNOs [1] offer several advantages, thanks to their simple bilayer structure, such as significant freedom in device fabrication, material, and layout, and direct optical access to the active auto-oscillating region. SHNOs also exhibit robust frequency response [2], easy injection locking [3], and robust mutual synchronization [4]. These properties make them ideal candidates for broadband microwave signal generation, processing, and nonconventional oscillator computing.
Here we show how the controlled synchronization of SHNOs enables multiple forms of computing and demonstrations of robust mutual synchronization of two-dimensional SHNO arrays [5] (fig1.a) ranging from 2 × 2 to 8 × 8 nano-constrictions, which is observed both electrically and using micro-Brillouin light scattering microscopy (fig1.b.) Furthermore, using injection locking, we show that these SHNO arrays exposed to two independently tuned microwave frequencies exhibit the same synchronization maps (fig 1.d) as ones used for neuromorphic vowel recognition [6].
SHNOs are also potentially very appealing for oscillator network based Ising machines. Ising Machines are physical systems designed to find solutions to combinatorial optimization (CO) problems by using binary spins (Ising model). One promising approach is to use interacting non-linear oscillators that have been locked in phase to a signal at double their natural frequency. We show how phase-locked spin-Hall nano-oscillators, through the injection locking of a microwave frequency at the second harmonic, show a phase binarizations, see fig.2.(a-e), and can be used as computing units in Ising machines [7].
The core functionality required for real-world implementation of SHNOs for such potential computing applications is the individual control of the oscillators through external signal, we will show that such oscillators can be externally controlled in several ways including through optical control (fig2.f) [8]. Our demonstration of optical tuning of SHNOs might open up novel optical annealing schemes applicable to Ising machines, as well as for other computing applications. Furthermore, we discuss SHNOs readout using as well different means, which opens the way for two-dimensional synchronized SHNO networks for ultra-fast neuromorphic computing. 

**References:** 

[1]. V. E. Demidov et al., Appl. Phys. Lett. 105, 172410 (2014). 
[2]. A.A. Awad et al., Appl. Phys.Lett 116, 232401 (2020). 
[3]. T. Hache et al., Appl. Phys. Lett. 114,192405 (2019). 
[4]. A. A. Awad et al., Nat.Phys. 13, 292 (2017). 
[5]. M. Zahedinejad et al., Nat. Nanotechnol. 15, 47 (2020). 
[6]. M. Romera et al., Nature 563, 230 (2018). 
[7]. A. Houshang et al., Phys. Rev. Appl. 17, 014003 (2022). 
[8]. S. Muralidhar et al., Appl. Phys. Lett. 120, 262401 (2022). 

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Synchronization of Spin Hall nano

The Ising machine is an unconventional computing architecture that can be used to solve NP-hard combinatorial optimization problems more efficiently than traditional von Neumann architectures. Fast, compact oscillator networks that provide programmable connectivities among arbitrary pairs of nodes are highly desirable for the development of practical oscillator-based Ising machines. In this talk, I will discuss how an electrically coupled array of gigahertz spin Hall nano-oscillators can realize such a network (1). By developing a general analytical framework that describes injection locking of spin Hall oscillators with large precession angles, I will explicitly show the mapping between the coupled oscillators’ physical properties and the Ising model. I will describe how our analytical model is integrated into a versatile Verilog-A device that can emulate the coupled dynamics of spin Hall oscillator networks at the circuit level using conventional electronic components and considering phase noise and scalability. Finally, I will demonstrate how our results provide design insights and analysis tools toward the realization of a CMOS-integrated spin Hall oscillator Ising machine operating with a high degree of time, space, and energy efficiency. 

**References:** 

1. B. C. McGoldrick, J. Z. Sun, and L. Liu, Physical Review Applied, Vol. 17 (1), p.014006 (2022). 
2. J. Chou, S. Bramhavar, S. Ghosh, et. al., Scientific Reports, Vol. 9 (1), p.1 (2019). 

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Underline digital video library

Effects of Dopamine and Kappa Opioid Receptor Activity in the Rostral Nucleus Accumbens Shell on Ethanol Drinking in Rats

Field free switching of perpendicular magnetization by spin

Evidence of unconventional spin orbit torque in SnS/Ni80Fe20 heterostructures

Blanket Film Spin Orbit Torque Characterization via Four Probe Measurement

Interfacial potential gradient modulates Dzyaloshinskii Moriya interaction in Pt|Co|Metal multilayers

High efficiency magnetization switching via electrical manipulation of exchange bias and magnon current

Spin orbit Torques in Magnetron

Peculiarities of measured dependencies of strength of spin orbit interaction and anisotropy field on current density in FeCoB nanomagnet

Effect of alloying on spin orbit torque in Fe0.75Co0.25|Pt1−xXx bilayers

Spin currents generation and self Spin Orbit torque in GdFeCo ferrimagnet

Synchronization of Spin Hall nano

Ising Machine Based on Electrically Coupled Spin Hall Nano Oscillators

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