Biomass is an organic material that normally comes from plants or animals. The discovery of converting biomass wastes into graphene is a successful route for recovering sources because it is sustainable, renewable, and abundant. For both basic research and practical applications, finding a novel way to produce graphene with a high yield and excellent crystalline structure is critical. For this research, waste disposable paper-cups will be used for the formation of graphene sheets by using KOH activation while using FeCl3 as a catalyst. The chemical activation of carbon-rich materials using KOH as the activating agent is a ground-breaking technique because of its lower activation temperature and higher yield [1]. Also, the obtained graphene will have a well-defined micropore size distribution and extremely high surface area. The graphene nanostructure can be used as a filler for thermoplastic polymers since it provides polymers of several functional characteristics, which are not accessible by using other types of fillers. For this research, the extracted graphene nanoparticles will be used as a filler in polypropylene to enhance its morphological, mechanical, and thermal properties. Thermogravimetric analysis (TGA) and differential scanning calorimetry (DSC) tests will be used to determine the thermal properties of the graphene reinforced polymer composites. Also, X-ray diffraction (XRD), FTIR, SEM, TEM, and tensile tests will be used to determine the mechanical, microscopic, and morphological property.es of GRPC. The results obtained from this research indicates that high yield and high-quality graphene materials can be synthesized by using biomass resources rather than conventional methods and can be used as a filler in polymers that could improve the mechanical and thermal performance when dispersed uniformly.

Morphological, Mechanical, and Thermal Properties of Polypropylene Reinforced with Graphene Nanoparticles Extracted from Paper Cups.

Bilevel Optimization Programming is used to model complex and conflicting interactions between agents, for example in Robust AI or Privacy preserving AI. Integrating bilevel mathematical programming within deep learning is thus an essential objective for the Machine Learning community. 
Previously proposed approaches only consider single-level programming. In this paper, we extend existing single-level optimization programming approaches and thus propose Differentiating through Bilevel Optimization Programming (BiGrad) for end-to-end learning of models that use Bilevel Programming as a layer. 
BiGrad has wide applicability and can be used in modern machine learning frameworks. BiGrad is applicable to both continuous and combinatorial Bilevel optimization problems. We describe a class of gradient estimators for the combinatorial case which reduces the requirements in terms of computation complexity; for the case of the continuous variable, the gradient computation takes advantage of the push-back approach (i.e. vector-jacobian product) for an efficient implementation. Experiments show that the BiGrad successfully extends existing single-level approaches to Bilevel Programming.

Implicit Bilevel Optimization: Differentiating through Bilevel Optimization Programming

Noisy labels damage the performance of deep networks.  For robust learning, a prominent two-stage pipeline alternates between eliminating possible incorrect labels and semi-supervised training. However, discarding part of noisy labels could result in a loss of information, especially when the corruption has a dependency on data, e.g., class-dependent or instance-dependent. Moreover, from the training dynamics of a representative two-stage method DivideMix, we identify the domination of confirmation bias: pseudo-labels fail to correct a considerable amount of noisy labels, and consequently, the errors accumulate. To sufficiently exploit information from noisy labels and mitigate wrong corrections, we propose Robust Label Refurbishment (Robust LR)—a new hybrid method that integrates pseudo-labeling and confidence estimation techniques to refurbish noisy labels. We show that our method successfully alleviates the damage of both label noise and confirmation bias. As a result, it achieves state-of-the-art performance across datasets and noise types, namely CIFAR under different levels of synthetic noise and mini-WebVision and ANIMAL-10N with real-world noise.


Two Wrongs Don’t Make a Right: Combating Confirmation Bias in Learning with Label Noise

Robust training of neural networks has so far been developed in the context of white noise perturbations to limit their susceptibility to adversarial attacks. However, in applications neural networks need to be robust to a wider range of input perturbations, including contrast, brightness, and beyond. We here introduce the problem of training neural networks such that they are robust against a class of smooth intensity perturbations modelled by bias fields. We first develop an approach towards this goal based on a State-of-the-Art (SoA) robust training method utilising Interval Bound Propagation (IBP). We analyse the resulting algorithm and observe that IBP often produces very loose bounds for bias field perturbations, which may be detrimental to training. We propose an alternative approach based on Symbolic Interval Propagation (SIP), which usually results in significantly tighter bounds than IBP. We present RobNet, a tool implementing these approaches for bias field robust training. In experiments networks trained with the SIP-based approach achieved up to 31% higher certified robustness while also maintaining a better accuracy than networks trained with the IBP approach. 

Robust Training of Neural Networks against Bias Field Perturbations

Adversarial attacks on thermal infrared imaging expose the risk of related applications. Estimating the security of these systems is essential for safely deploying them in the real world. In many cases, realizing the attacks in the physical space requires elaborate special perturbations. These solutions are often \emph{impractical} and \emph{attention-grabbing}. To address the need for a physically practical and stealthy adversarial attack, we introduce \textsc{HotCold} Block, a novel physical attack for infrared detectors that hide persons utilizing the wearable Warming Paste and Cooling Paste. By attaching these readily available temperature-controlled materials to the body, \textsc{HotCold} Block evades human eyes efficiently. Moreover, unlike existing methods that build adversarial patches with complex texture and structure features, \textsc{HotCold} Block utilizes an SSP-oriented adversarial optimization algorithm that enables attacks with pure color blocks and explores the influence of size, shape, and position on attack performance. Extensive experimental results in both digital and physical environments demonstrate the performance of our proposed \textsc{HotCold} Block. \emph{Code is available: https://github.com/weihui1308/HOTCOLDBlock}.

HOTCOLD Block: Fooling Thermal Infrared Detectors with a Novel Wearable Design

Ge has a nearly direct bandgap because the direct I valley (k = 0 in momentum space) is only 140 meV above the indirect L valley. Tensile strain (>2%) and alloying (Ge, _,Sn, or Ge, _ C_) are the two most common approaches to make Ge-based direct bandgap materials . Although Ge 4-0" becomes a direct bandgap material with x>10%, Strained growth on Ge or GaAs adds undesirable compressive strain’. Worse, the very small electron effective mass (m, = 0.02m9) loses the direct bandgap when confined in a quantum well (QW) or dot®. Our group has previously demonstrated that Ge, C. with y = 1% has a direct bandgap, and reported GeC using a special precursor (4GeMe) as a C source in molecular beam epitaxy (MBE), with no defects detected in transmission electron microscopy (TEM) ’~. In this work, we instead grew Gey ySnC using a simpler C precursor. GeSnC adds additional control in epitaxial growth: Sn and C partially compensate local strain and distortion of the host Ge bonds. Ab-initio calculations predict that C-Sn-C bonding would be energetically favorable over C-C bonds in the Ge lattice. This is likely to increase both C and Sn substitutional incorporation and provides a more stable material, similar to InGaAs:N . We saw no evidence of Sn segregation as surface droplets, nor C incorporation as undesirable C-C or C=C bonded nano-clusters. Therefore, adding Sn might reduce the carbon clustering at the surface which would be a great achievement compare with past growths by other groups. As an added benefit, GeC offers a larger electron effective mass (Mop): which would preserve the direct bandgap in GeSnC even when confined in a QW. Tensile strained Ge Sn Cy. was grown on GaAs (004) substrate in hybrid MBE using thermal Ge, Sn sources and commercial carbon tetrabromide (CBr) as the carbon source. We believe sp2 C-C pairs are likely defects in the carbon containing alloys, so we also used hydrogen to preferentially remove sp2 carbon, as is done in growth of epitaxial diamond. High resolution x-ray diffraction (HRXRD) reveals good crystallinity in the epi-layer with maximum 3% of substitutional carbon and 4% tin. Raman observation of the C local mode at 530 cm confirms substitutional incorporation into the crystal. Atomic Force Microscopy (AFM) shows mostly flat surfaces. Unlike most other carbon sources, no sp2 (graphitic) or amorphous carbon bonds were detected in Raman spectroscopy from 1200-1600 om”! (not shown). The successful incorporation of C into Ge substitutionally, without cluster carbon, is a major step toward efficient Group IV lasers for silicon photonics. We have also observed emissions in 0.50-0.60 eV range both from bulk and multiple quantum well (MQW) GeSnC samples. These peaks could be from different atomic arrangements, from defects, or from non-uniform QW compositions. The detailed origins of the emission spectrum are currently under investigation and will be reported at the conference. Reference 1. Jifeng Liu, Photonics 1 (3), 162 (2014) 2. G. Grzybowski, R. T. Beeler, L. Jiang, D. J. Smith, J. Kouvetakis, and J. Menéndez, Applied Physics Letters 101 (7), 072105 (2012) 3. M. P. Polak, P. Scharoch, and R. Kudrawiec, Journal of Physics D: Applied Physics 50 (19) (2017) 4. C. A. Stephenson, W. A. O'Brien, M. W. Penninger, W. F. Schneider, M. GillettKunnath, J. Zajicek, K. M. Yu, R. Kudrawiec, R. A. Stillwell, and M. A. Wistey, Journal of Applied Physics 120 (5) (2016) 5. C. A. Stephenson, W. A. O'Brien, M. W. Penninger, W. F. Schneider, M. Gillett-Kunnath, J. Zajicek, K. M. Yu, R. Kudrawiec, R. A. Stillwell, and M. A. Wistey, Journal of Applied Physics 120 (5) (2016). 6. Vincenzo Lordi, Homan B. Yuen, Seth R. Bank, Mark A. Wistey, James S. Harris, and Stephan Friedrich, Physical Review B 71 (12) (2005)

Molecular Beam Epitaxy Growth of Highly Tensile Strained GeSnC Alloys up to 4% Sn and 3% C

The mid-infrared wavelength range (3 -30 um, mid-IR) is a spectral range of significant importance. The mid-wave infrared (MWIR, 3 -5 um) transmission window, specifically, is vital for applications such as gas sensing and free-space communication, as well as thermal imaging of mechanical objects (engines, turbines, etc) that have temperatures ~580-970 K. For an infrared detector, efficient operation at high temperatures is typically the primary goal. While Mercury-Cadmium-Telluride (HgCdTe) detectors are the current state-of-art infrared detectors, the type-II superlattices (T2SLs) have shown to be a promising alternative material system. However, the comparatively lower absorption coefficient of the T2SL detectors presents a challenge, due to the trade-off (as a function of the absorber thickness) between large external quantum efficiency and higher collection efficiency/reduced dark current. This limitation can be addressed by incorporating thin detector absorber regions in resonant photonic architectures. One such architecture is the guided-mode resonance structure, comprising a high-refractive index grating layer sandwiched between two low-index layers[1]. Incident light diffracts into guided modes in the grating layer, which can then couple out to free space. When the outcoupled light interferes constructively/destructively with reflected/transmitted light, strong and narrow resonant peaks/dips can occur in the reflection/transmission spectra. We design a GMR structure where index-contrast required is achieved with highly doped (n**) which can be modeled with the Drude formalism, allowing for a lattice matched material system with extremely low semiconductor layers, refractive index in the MWIR, which can serve as a waveguide cladding layer. In this work, we build on our previous efforts[2], to demonstrate GMR-enhanced all-epitaxial uncooled (roomtemperature) MWIR nBn InAs/InAsSb T2SL detectors. We have designed, grown, fabricated and characterized GMR detectors showing such enhancement in a T2SL absorber only 250 nm thick. GaSb serves as a high-index grating layer which, together with the nBn detector (serving as a waveguide core), is sandwiched between a low-index n* virtual substrate and air. For grating periods A= 1.6 um and 1.8 um, resonances with enhancement of = 8x & 14 are shown at wavelengths, A= 4.4 um & 4.7 um respectively which is very close to the band-edge of the absorber (=5 um). Typically, due to the steep drop in absorption coefficient close to the band-edge, it is extremely difficult to obtain sufficient external quantum efficiency near the absorber band edge. Thus, detectors must be grown with lower energy cut-off, which will significantly increase dark current and degrade device detectivity. The ability to enhance EQE at the band edge of the absorber T2SL, allows us to use higher energy cut-off absorbers without degrading absorption efficiency. Moreover, the ultra-thin absorber, when compared to a typical MWIR detector, offers a significant reduction in dark current, when compared to traditional MWIR III-V detectors operating in same wavelength range, at similar temperatures. Significant improvement in both the optical and electrical performance of the GMR detectors results in superior specific detectivities. TE-polarized estimated specific detectivity D* = 1.2 x10 0 & 1 x19'0 cmvVHz/W are reported for the A= 1.6 um and 1.8 um devices, respectively. Future work will investigate polarization-independent detectors with substrate-side illumination for potential incorporation into focal-plane array architectures. The authors gratefully acknowledge United States Army under Prime Contract W9O09MY-20-P-0010 and National Science Foundation (ECCS-1926187 and ECCS-2025227). References: 1. S. S. Wang and R. Magnusson, Appl. Opt., vol. 32, no. 14, pp. 2606-2613, May 1993. 2. A. Kamboj, L. Nordin, P. Petluru, A. J. Muhowski, D. N. Woolf, and D. Wasserman, Appl. Phys. Lett., vol. 118, no. 20, p. 201102, 2021.

Guided-Mode Resonance Enhanced Room-Temperature Infrared Detectors

In recent years, oxide electronics has emerged as one of the most promising new technologies for a variety of electrical and optoelectronic applications, including next-generation displays, solar cells, batteries, and photodetectors. Oxide electronics have a lot of potential because of their high carrier mobilities and ability to be manufactured at low temperatures. However, the preponderance of oxide semiconductors is n-type oxides, limiting present applications to unipolar devices and stifling the development of oxide-based bipolar devices like p-n diodes and complementary metal-oxide—semiconductors. We have contributed to oxide electronics, particularly on transition metal oxide semiconductors of which the cations include In, Zn, Sn and Ga. We have integrated these oxide semiconductors into thin film transistors (TFTs) as active channel layer in light of the unique combination of electronic and optical properties such as high carrier mobility (5-10 cm“/Vs), optical transparency in the visible regime (>~90%) and mild thermal budget processing (200-400°C). In this study, we achieved four different results. The first result is that unlike several previous reports on oxide p-n junctions fabricated exploiting a thin film epitaxial growth technique (known as molecular beam epitaxy, MBE) or a high-powered laser beam process (known as pulsed laser deposition, PLD) that requires ultra-high vacuum conditions, a large amount of power, and is limited for large-area processing, we demonstrate oxide-based heterojunction p-n diodes that consist of sputter-synthesized p-SnOx and n-IGZO of which the manufacturing routes are in-line with current manufacturing requirements. The second result is that the synthesized p-SnOx films are devoid of metallic Sn phases (i.e., sn? state) with carrier density tuneability and high carrier mobility (> 2 cm2/Vs). The third result is that the charge blocking performance of the metallurgical junction is significantly enhanced by the engineering of trap/defect density of n-IGZO, which is identified using photoelectron microscopy and valence band measurements. The last result is that the resulting oxide-based p-n heterojunction exhibits a high rectification ratio greater than 10° at +3 V (highest among the sputter-processed oxide junctions), a low saturation current of ~2x10 © A, and a small turnon voltage of ~0.5 V. The outcomes of the current study are expected to contribute to the development of p-type oxides and their industrial device applications such as p-n diodes of which the manufacturing routes are in-line with the current processing requirements. Reference: 1. Lee, S.; Paine, D. C., Metallization selection and the performance of amorphous In-Zn-O thin film transistors. Applied Physics Letters 2014, 104 (25), 252103. 2. Liu, M.; Kim, H.; Wang, X.; Song, H. W.; No, K.; Lee, S., Carrier Density-Tunable Work Function Buffer at the Channel/Metallization Interface for Amorphous Oxide Thin-Film Transistors. ACS Applied Electronic Materials 2021, 3 (6), 2703-2711. 3. Chu, X., Zhuang, S., Chi, C., Xu, H., Du, G., Dong, X., & Yin, J. (2017). Study on the electroluminescence properties of the P-nimgo:Li/mgo/n-zno nanowires/ito heterojunction. Journal of Luminescence, 187, 486-491. 4. Kawazoe, H.; Yanagi, H.; Ueda, K.; Hosono, H., Transparent p-Type Conducting Oxides: Design and Fabrication of p-n Heterojunctions. MRS Bull. 2000, 25 (08), 28-36. 5. Mo, X., Fang, G., Long, H., Li, S., Wang, H., Chen, Z., Huang, H., Zeng, W., Zhang, Y., & Pan, C. (2014). Unusual electroluminescence from n-ZnO@i-MgO core-shell nanowire color-tunable light-emitting diode at reverse bias. Phys. Chem. Chem. Phys., 16(20), 9302-9308. 6. Nomura, K.; Ohta, H.; Takagi, A.; Kamiya, T.; Hirano, M.; Hosono, H., Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors. Nature 2004, 432 (7016), 488-492.

Facile Processing and Properties of P-Type SnOx and Oxide-Based p-n Heterojunction Application with n-InGaZnO

As the complexity of flexible electronic devices such as displays and sensors has increased, new plastic-compatible manufacturing methods are becoming necessary to produce high-yield, low-defect flexible circuits. While solution-processed methods such as printing can be used to fabricate circuits on low-temperature substrates, printing is not always a feasible option to realize complex, high-density circuits with small devices. In particular, highresolution display applications typically require single-micron feature sizes and excellent uniformity over large-area substrates. For these applications, more precise fabrication techniques such as photolithography are required. However, due to the poor dimensional stability of polymers, even low-temperature processes such as soft bakes during lithography can alter the substrate dimensions. The problem of dimensional stability can be overcome by attaching the polymer film to a rigid carrier during device fabrication, then releasing the polymer substrate with the fully fabricated device layer on top. For this reason, the separation of polymer films from rigid carriers remains a crucial step in creating next-generation flexible electronics. In this talk, we will discuss a large-area, high-throughput photonic lift-off (PLO) process to rapidly separate polymer films from rigid carriers. PLO uses broadband light (200 nm — 1100 nm) from a flashlamp to lift off a polymer film from a rigid carrier coated with a light-absorbing layer (LAL), where the polymer film may contain functional devices [1]. Compared to a raster process such as excimer laser lift-off, the PLO process is advantageous as it can enable large area lift-off (150 mm x 75 mm) in one flash of light lasting between 100- 200 us, thus enabling higher throughput. Furthermore, the LAL prevents direct illumination of the polymer substrate during lift-off and facilitates cleaner lift-off without polymer ashing. The LAL also makes PLO a polymer-agnostic process, enabling lift-off of a wide range of polymers. We will discuss our recent work fabricating flexible thin-film transistors (TFTs) using PLO [2]. Polyimide with a low coefficient of thermal expansion (CTE) was used to minimize residual film stress. Indium zinc oxide (IZO) TFTs were fabricated on the polyimide films and subsequently released from the carrier using PLO. The released devices demonstrated no significant changes after the PLO process, yielding a mobility of ~3 cm“V_s__ before and after liftoff. The flexible TFTs were robust to bending stress, showing no notable decrease in mobility while bent with a 10 mm radius of curvature. When combined with the ability to successfully separate the PI from the carrier, the low-CTE PI creates a robust fabrication platform for flexible electronics that allows conventional patterning and deposition techniques to be used on a plastic substrate while maintaining dimensional stability with processing temperatures up to 380 °C. A 3D finite element model indicates that the polymer/LAL interface reaches above 800 °C during PLO, but the top surface of the PI remains below 120 °C. The model shows that the maximum temperature at the device layer during PLO is strongly impacted by the thickness and material properties of the polymer film, highlighting the value of the model to guide PLO device design. This work demonstrates the feasibility of PLO to successfully release polyimide substrates containing flexible electronic devices from glass carriers after withstanding conventional lithographic processing methods. [1] R. Hendriks and K. A. Schroder, “Method for performing delamination of a polymer film. U.S. Patent 10,011,104.,” U.S. Patent 10,011,104, Jul. 03, 2018 [2] A. M. Weidling, V. S. Turkani, V. Akhavan, K. A. Schroder, and S. L. Swisher, “Large-Area Photonic Lift-off Process for Flexible Thin-Film Transistors,” in press.

Large-Area Photonic Lift-off Process for Flexible Thin-Film Transistors

Boron nitride (BN) nanotube is an anisotropic nanomaterial that possess unique intrinsic properties like high thermal conductivity, electrically insulating, high oxidation resistance, superior mechanical strength, and piezoelectric property. The incorporation of the BN nanotubes in polymer has created opportunities to produce composites with a wide range of possible applications like aerospace applications, thermal interface material. However, the improved properties of these composite like thermal transport ability are still far from expected and theoretical stipulations due to the random orientation of these nanotubes with excellent in-plane properties and poor out-of-plane properties. Therefore, controlling the orientation of the nanotubes in the composite is important for optimizing its performance. This paper focused on the magnetic modification of boron nitride nanotubes for their alignment in polymer composite. The magnetic modification of the BN nanotube is carried out by functionalizing nanotubes with iron oxide nanoparticles (magnetite) which produces paramagnetic BN nanotubes. These functionalized BN nanotubes exhibit magnetic responses that can enable control over their orientation and position under low external magnetic fields in low viscous fluids. The BN nanotubes are modified through electrostatic interaction with the iron oxide nanoparticles, therefore, preserving their intrinsic properties and structure. The paramagnetic nanotubes are to be dispersed in polymer fluid, controlled with magnets, and cured to maintain nanotubes' position and alignment. The magnetic functionalization of BN nanotubes can provide the ability to spatially manipulate these nanotubes into more complex networks crucial for applications in nanoelectronics, sensors, spintronics, and thermoelectric devices. It can also enable the fabrication of anisotropic composite materials with improved directional property and high thermal transport ability.

Magnetic Modification of Boron Nitride Nanotubes for Alignment in Thermal Interface Composite

High-performance thermoelectric materials are currently being sought after to recycle waste heat. Copper chalcogenides in general are materials of great interest because of their naturally low thermal conductivity and readily modifiable electronic properties. The compounds Cu5Sn2Q7 were previously reported to have metal-like properties, which is not a desirable characteristic for thermoelectric materials. The aim of this study was to reduce the carrier concentration of these materials by Zn-doping, and then investigate the electronic and thermoelectric properties of the doped materials in comparison to the undoped ones. The compounds were synthesized using both the traditional solid-state tube method and ball-milling. The crystal structures were characterized using powder X-ray diffraction, which confirmed that all materials crystallize in the monoclinic system with the space group C2. With the partial substitution of zinc for copper atoms, the compounds exhibited an overall improvement in their thermoelectric properties. Figure of merit values were determined to be 0.20 for Cu4ZnSn2Se7 at 615 K and 0.05 for Cu4ZnSn2Te7 at 575 K

Zinc Multi-Pnictogens Semiconductors—Cu Doping and Thermoelectric Characteristics

Nanoscale spintronics devices can revolutionize computer logic and memory units. Interestingly, paramagnetic nanostructures strongly exchange coupled with two ferromagnetic electrodes can yield novel forms of magnetic materials. However, there is a knowledge gap about the role of the number of paramagnetic nanostructures on the various properties of whole spintronics devices. To make this study relevant to the experimentally attainable device structure, we focus on the magnetic tunnel junction (MTJ) based spintronics device architecture. Under this approach, paramagnetic nanostructures are placed along the MTJ perimeter. We assume that the tunnel barrier of the MTJ does not allow any leakage current or exchange coupling, and paramagnetic nanostructures dictate the exchange coupling between the ferromagnetic electrodes. Also, the width of the ferromagnetic electrodes is governed by the number of paramagnetic nanostructures. This study systematically varied the number of nanostructures from 1 to 625 (25 x 25). The overall device was represented by a Heisenberg 3D model containing five atomic layer thick ferromagnetic electrodes. The number of paramagnetic nanostructures governed the width of the ferromagnetic electrodes. For instance, the device with a single nanostructure and 5 x 5 nanostructure possessed FM electrodes with one atom and five atom width, respectively. The paramagnetic nanostructures — sandwiched between the two FM electrodes — were placed on the perimeter of the 5 x 5 square with an empty space inside the square. The empty space shows the presence of an insulating spacer needed to provide the physical separation to enable paramagnetic nanostructures to control the spin dynamics of the device . The strength of exchange coupling between the paramagnetic nanostructure and ferromagnetic electrodes was fixed to be antiferromagnetic, consistent with experimental observations with analogous devices . We observed that thermal energy strongly influenced the temporal evolution of the equilibrium state of devices. The device with a single paramagnetic nanostructure struggled to align the left ferromagnet (Left-FM) and right ferromagnetic electrode (Right -FM) at low thermal energy of kT = 0.01. At higher thermal energy, devices with a single paramagnetic nanostructure underwent significant fluctuations. The device with a 5 x 5 paramagnetic structure also had difficulty attaining the fully antiparallel state at low thermal energy of kT = 0.01. However, at higher thermal energy of kT = 0.1, 5 x 5 paramagnetic nanostructure started producing conclusive antiparallel ferromagnetic electrodes. This paper will discuss the full range of paramagnetic nanostructures up to 25 x 25 sizes over the thermal energy range from 0.01 to 0.1. To estimate the spatial impact range of the nanostructures, we also investigated the spatial correlation factor for each case. In addition, we also compute the spatial magnetic susceptibility and heat capacity of the device. References: 1. Tyagi, P.; Riso, C.; Friebe, E., Magnetic Tunnel Junction Based Molecular Spintronics Devices Exhibiting Current Suppression At Room Temperature. Organic Electronics 2019, 64, 188-194. 2. Savadkoohi, M.; Dahal, B. R.; Grizzle, A.; D'Angelo, C.; Tyagi, P., Interaction between magnetic molecules and two ferromagnetic electrodes of a magnetic tunnel junction (MTJ). Journal of Magnetism and Magnetic Materials 2021, 529, 167902.

A Monte Carlo Study of Paramagnetic Nanostructure Coupled with Two Ferromagnetic Electrodes of a Cross-Junction Shaped Spintronics Device at Different Thermal Energies

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