The 14th MRAM Global Innovation Forum is a one-day forum organized the day following IEDM in San Francisco. The Forum consisted of 11 invited talks from leading experts and a panel discussion. Various MRAM related topics were covered including STT-MRAM technology, memory and processor demonstrations, SOT-MRAM, and the needs, challenges and potential of MRAM. The Forum was originally initiated by Samsung Semiconductor, and this forum marks the 14th edition of the series.

**Program committee:** 
Jean-Anne Incorvia (Texas University, USA) 
Daniel Worledge (IBM Research, USA) 
Luc Thomas (Applied Materials, USA) 
Kyung-Jin Lee (Korea Univ., South Korea) 
Shunsuke Fukami (Tohoku University, Japan) 
Jordan Katine (Western Digital, USA) 
Jack Guedj (Numem, USA) 
Bernard Dieny (SPINTEC, France) 
Kevin Garello (SPINTEC, France) 

**Acknowledgements:** 
This Forum is the 14th of a series initiated by Samsung Semiconductor in 2013. It is supported by Samsung Semiconductor through a donation to the IEEE Magnetics Society. The whole Society deeply thanks Samsung for this generous sponsorship. 

Phyllis Mahoney and coworkers are sincerely acknowledged for their help with the Forum organization.

To gain access to this event page you are required to register. 

Please register [here](https://forms.gle/rgp1Db8wpdywefTFA).



IEEE IEDM 2022 - MRAM Forum

The 14th MRAM Global Innovation Forum is a one-day forum organized the day following IEDM in San Francisco. The Forum consisted of 11 invited talks from leading experts and a panel discussion. Various MRAM related topics were covered including STT-MRAM technology, memory and processor demonstrations, SOT-MRAM, and the needs, challenges and potential of MRAM. The Forum was originally initiated by Samsung Semiconductor, and this forum marks the 14th edition of the series.